Abstract:A giant magnetoresistance is induced by self‐introducing interstitial Cr atoms in the van der Waals gaps of CrTe2 layers. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, resulting from the antiferromagnetic interlayer coupling between the adjacent CrTe2 layers below the Néel temperature. These findings offer a new horizon in engineering functional structures for 2D magnet‐based spintronics. One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe2 layers in an ultra‐high vacuum‐free 2D magnetic crystal, Cr5Te8 is reported. By self‐introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low‐power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism.

Ultrathin Van Der Waals Antiferromagnet CrTe3 for Fabrication of In‐Plane CrTe3/CrTe2 Monolayer Magnetic Heterostructures

Planar Heterojunction of Ultrathin CrTe3 and CrTe2 Van Der Waals Magnet.

Planar Heterojunction of Ultrathin CrTe 3 and CrTe 2 van der Waals Magnet

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Self‐Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

Spin mapping of intralayer antiferromagnetism and spin-flop transition in monolayer CrTe$_2$

Covalent 2D Cr$_2$Te$_3$ ferromagnet

Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

Spin mapping of intralayer antiferromagnetism and field-induced spin reorientation in monolayer CrTe2

Covalent 2D Cr2Te3 Ferromagnet

Ferromagnetism in Two-Dimensional CrTe2 Epitaxial Films Down to a Few Atomic Layers

Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

Two-Dimensional Ferromagnetism In Crte Flakes Down To Atomically Thin Layers

Two-dimensional van der Waals ferromagnetic thin film CrTe2 with high Curie temperature and metallic conductivity

Atomically constructing a van der Waals heterostructure of CrTe2/Bi2Te3 by molecular beam epitaxy

Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling

Antiferromagnetism in the van der Waals layered spin-lozenge semiconductor CrTe3

Wafer‐Scale Epitaxial Growth of the Thickness‐Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications