Giant Topological Hall Effect in van der Waals Heterostructures of CrTe 2 /Bi 2 Te 3
Xiaoqian Zhang,Siddhesh C. Ambhire,Qiangsheng Lu,Wei Niu,Jacob Cook,Jidong Samuel Jiang,Deshun Hong,Laith Alahmed,Liang He,Rong Zhang,Yongbing Xu,Steven S.-L. Zhang,Peng Li,Guang Bian
DOI: https://doi.org/10.1021/acsnano.1c05519
IF: 17.1
2021-08-30
ACS Nano
Abstract:Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii–Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin–orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μΩ·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.1c05519.Figures of STM images, line-scan profiles, ARPES spectra, field dependence of Hall resistivity at different temperatures, ρTHE and ρAHE at a temperature range, recorded Hall voltages, and overall view and enlarged view of the two-channel AHE fitting and discussion of the Ginzburg–Landau model (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology