Abstract:The demand for polished silicon wafers has increased significantly in recent years to cater to the development of the semiconductor industry. For example, polished silicon wafer has direct applications in integrated circuits, radio frequency amplifiers, micro-processors, micro-electromechanical systems, etc. To carry out mechanical polishing, lapping, grinding, or single-point diamond turning of silicon, diamond abrasives were extensively used before the implementation of chemo-mechanical polishing. During the diamond-based polishing, a few problems have already been identified, such as the formation of an amorphous phase, heat-affected zones, low material removal, etc. Some research work has also reported that nano-structured abrasives lead to a thin layer of the amorphous phase and a better material removal rate. In the same direction, a molecular dynamics simulation is carried out in this paper to investigate the mechanism of material removal from monocrystalline silicon during the diamond-abrasive-based polishing process. The present work is mainly focused on the dynamics of material removal phenomena near the abrasive particles at the nanometric scale by considering stress, lattice, cohesive energy, etc. This reveals that a higher value of indentation force results in surface buckling, which creates a zone of both compressive and tensile stresses, which increases the coordination number and forms β-silicon just ahead of the abrasive particle. This mechanism happens by developing a β-silicon phase on the surface with a thickness beyond a certain value of indentation force on the zone of compression. Buckling on this phase happens due to stress localisation in compression, as the flow stress of this phase is less than that of diamond cubic lattices. To avoid the mechanism of surface buckling and process silicon material on the surface, the indentation force needs to be maintained below a critical value. In the present case, it was found that the indentation force of less than or equal to 190 nN for the abrasive size of φ8 nm does the material removal by surface processing only without surface buckling. It was also found that surface processing helps to reduce the depth of the amorphous layer significantly without compromising the material removal rate or the generation of a wavy surface. Thus, the present mechanism will help in the polishing of silicon with minimum defects and reduce processing time for the final stage of polishing towards manufacturing ultra-smooth and planer surfaces.

Microscopic Mechanism for Mechanical Polishing of Diamond (110) Surfaces

Study on Mechanism for Material Removal and Surface Generation by Molecular Dynamics Simulation in Abrasive Processes

Novel surface characteristics observed during grinding of polycrystalline diamond

Atomistic understanding of rough surface on the interfacial friction behavior during the chemical mechanical polishing process of diamond

Mechanism of surface modification on monocrystalline silicon during diamond polishing at nanometric scale

Molecular dynamics simulation of nano-polishing of single crystal silicon on non-continuous surface

Effects of processing parameters and grinding direction on the material removal mechanism of (100) surface single crystal diamond in self-rotating mechanical grinding

A Systematic Study of the Factors Affecting the Surface Quality of Chemically Vapor-Deposited Diamond during Chemical and Mechanical Polishing

Atom-by-Atom and Sheet-by-Sheet Chemical Mechanical Polishing of Diamond Assisted by OH Radicals: A Tight-Binding Quantum Chemical Molecular Dynamics Simulation Study

Roughness Control in the Processing of 2-Inch Polycrystalline Diamond Films on 4H-Sic Wafers

Nanoscale smooth and damage-free polycrystalline diamond surface ground by coarse diamond grinding wheel

Adhesion and wear of diamond: formation of nanocracks and adhesive craters of torn out material

Influence mechanism of defects on the subsurface damage and structural evolution of diamond in CMP process

Polishing of {100} and {111} single crystal diamond through the use of Chemical Mechanical Polishing

Mechanism of polishing lutetium oxide single crystals with polyhedral diamond abrasive grains based on molecular dynamics simulation

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

A study on mechanism of sapphire polishing using the diamond abrasive by molecular dynamics

Effect of grain boundary on polycrystalline diamond polishing by high-speed dynamic friction

Magnetization and self-sharpening mechanism of polymerized diamond abrasive based on magnetorheological polishing technology

Micro/Nano Indentation and Single Grit Diamond Grinding Mechanism on Ultra Pure Fused Silica

Surface microstructuring of single crystalline diamond based on the accumulated energy homogenization in the nanosecond pulsed laser ablation