Abstract:Quantum dot (QD) light-emitting diodes (LEDs) are ideal for large-panel displays because of their excellent efficiency, colour purity, reliability and cost-effective fabrication1–4. Intensive efforts have produced red-, green- and blue-emitting QD-LEDs with efficiencies of 20.5 per cent4, 21.0 per cent5 and 19.8 per cent6, respectively, but it is still desirable to improve the operating stability of the devices and to replace their toxic cadmium composition with a more environmentally benign alternative. The performance of indium phosphide (InP)-based materials and devices has remained far behind those of their Cd-containing counterparts. Here we present a synthetic method of preparing a uniform InP core and a highly symmetrical core/shell QD with a quantum yield of approximately 100 per cent. In particular, we add hydrofluoric acid to etch out the oxidative InP core surface during the growth of the initial ZnSe shell and then we enable high-temperature ZnSe growth at 340 degrees Celsius. The engineered shell thickness suppresses energy transfer and Auger recombination in order to maintain high luminescence efficiency, and the initial surface ligand is replaced with a shorter one for better charge injection. The optimized InP/ZnSe/ZnS QD-LEDs showed a theoretical maximum external quantum efficiency of 21.4 per cent, a maximum brightness of 100,000 candelas per square metre and an extremely long lifetime of a million hours at 100 candelas per square metre, representing a performance comparable to that of state-of-the-art Cd-containing QD-LEDs. These as-prepared InP-based QD-LEDs could soon be usable in commercial displays. A method of engineering efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes (QD-LEDs) has improved their performance to the level of state-of-the-art cadmium-containing QD-LEDs, removing the problem of the toxicity of cadmium in large-panel displays.

Stable and Efficient Red InP-Based QLEDs through Surface Passivation Strategies of Quantum Dots

Recent Advances in Synthesis and Luminescent Performance of Environmental-Friendly InP Quantum Dot

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes

High-Efficiency Pure-Red CsPbI 3 Quantum Dot Light-Emitting Diodes Enabled by Strongly Electrostatic Potential Solvent and Sequential Ligand Post-treatment Process

Passivating CsPbBrxI3_x Quantum Dots Via Modifiers Film to Achieve Efficient Red Light-Emitting Diodes

Shelf-Stable Green and Blue Quantum Dot Light-Emitting Diodes with High Efficiencies

Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component

Bifunctional Electron-Transporting Agent for Red Colloidal Quantum Dot Light-Emitting Diodes

Design of the Hole-Injection/Hole-Transport Interfaces for Stable Quantum-Dot Light-Emitting Diodes

72‐1: Enhancing the Efficiency of Perovskite Quantum Dot Light‐Emitting Diodes Through Surface Engineer with Organic Small Molecule Ligands

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Passivating CsPbBr I3− quantum dots via modifiers film to achieve efficient red light-emitting diodes

Dipole-Tunable Interfacial Engineering Strategy for High-Performance All-Inorganic Red Quantum-Dot Light-Emitting Diodes

Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes

Interfacial Passivation Engineering for Highly Efficient Quantum Dot Light-Emitting Diodes via Aromatic Amine-Functionalized Dipole Molecules

Efficient Green Light-Emitting Diodes Based on Alloy Quantum Dots with an Organic/Inorganic Hybrid Surface Passivation

Green InP/ZnSeS/ZnS Core Multi‐Shelled Quantum Dots Synthesized with Aminophosphine for Effective Display Applications

High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility

Influence of Surface Passivation on Perovskite CsPbBr1.2I1.8 Quantum Dots and Application of High Purity Red Light-Emitting Diodes

Boosting Efficiency and Stability of Green InP Quantum Dot Light-Emitting Diodes by Interface Dipole Modulation

In situ and General Multidentate Ligand Passivation Achieves Efficient and Ultra‐Stable CsPbX3 Perovskite Quantum Dots for White Light‐Emitting Diodes