Abstract:Quantum-dot light-emitting diodes promise a new generation of high-performance and solution-processed electroluminescent light sources. Understanding the operational degradation mechanisms of quantum-dot light-emitting diodes is crucial for their practical applications. Here, we show that quantum-dot light-emitting diodes may exhibit an anomalous degradation pattern characterized by a continuous increase in electroluminescent efficiency upon electrical stressing, which deviates from the typical decrease in electroluminescent efficiency observed in other light-emitting diodes. Various in-situ/operando characterizations were performed to investigate the evolutions of charge dynamics during the efficiency elevation, and the alterations in electric potential landscapes in the active devices. Furthermore, we carried out selective peel-off-and-rebuild experiments and depth-profiling analyses to pinpoint the critical degradation site and reveal the underlying microscopic mechanism. The results indicate that the operation-induced efficiency increase results from the degradation of electron-injection capability at the electron-transport layer/cathode interface, which in turn leads to gradually improved charge balance. Our work provides new insights into the degradation of red quantum-dot light-emitting diodes and has far-reaching implications for the design of charge-injection interfaces in solution-processed light-emitting diodes.

Interfacial Passivation Engineering for Highly Efficient Quantum Dot Light-Emitting Diodes via Aromatic Amine-Functionalized Dipole Molecules

Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes

Anomalous Efficiency Elevation of Quantum-Dot Light-Emitting Diodes Induced by Operational Degradation.

Progress on Interfacial Control of Quantum Dot Light-Emitting Diodes

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Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer

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Design of the Hole-Injection/Hole-Transport Interfaces for Stable Quantum-Dot Light-Emitting Diodes

Efficient Green Light-Emitting Diodes Based on Alloy Quantum Dots with an Organic/Inorganic Hybrid Surface Passivation

72‐1: Enhancing the Efficiency of Perovskite Quantum Dot Light‐Emitting Diodes Through Surface Engineer with Organic Small Molecule Ligands

Electrochemically-Stable Ligands Bridge The Photoluminescence-Electroluminescence Gap Of Quantum Dots

Bifunctional Electron-Transporting Agent for Red Colloidal Quantum Dot Light-Emitting Diodes

Optimizing QLED Performance and Stability via the Surface Modification of PEDOT:PSS Experimental Insights and DFT Calculations

Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer

Utilizing a Compact Diamino-Based Ligand as a Charge Balancer in Quantum Dot Light-Emitting Diodes

Boosting Efficiency and Stability of Green InP Quantum Dot Light-Emitting Diodes by Interface Dipole Modulation

Shelf-Stable Green and Blue Quantum Dot Light-Emitting Diodes with High Efficiencies

Interfacial Passivation Strategy Enabled Efficient Perovskite Quantum Dot Light-Emitting Diodes