Abstract:Rashba spin-orbit coupling (RSOC) facilitates spin manipulation without relying on an external magnetic field, opening up exciting possibilities for advanced spintronic devices. In this work, we examine the effects of crystal momentum ($k$) nonlinearity and anisotropy on the conventional Rashba effect, with a particular focus on their impact on the spin Hall conductivity (SHC) in a newly predicted family of 2D Janus materials, W$_2$COX (X = S, Se, Te). Using first-principles density functional theory calculations, we confirm the dynamical and mechanical stability of the studied 2D materials. Strikingly, this materials family exhibits pronounced nonlinear Rashba spin splitting at the $\Gamma$ point of Brillouin zone near the Fermi level, which cannot be adequately described by the linear-$k$ Rashba model. Therefore, third-order momentum contributions ({$k^3$}) must be incorporated into the Rashba Hamiltonian. Our analysis reveals that among the studied systems, W$_2$COS exhibits the highest {$k^3$} contribution of $-45.9$\,eV\,{Å$^3$}, despite having the lowest linear Rashba constant. A detailed analysis of electronic structure reveals topological nontrivial behaviour in these 2D materials, yielding sizable SHC that is primarily governed by the nonlinear Rashba effect. Notably, these materials also exhibit large spin Hall angle (0.018 -- 2.5), which is comparable to that of in bulk topological insulators like Bi$_2$Se$_3$ and Bi$_2$Te$_3$, and surpassing those in narrow bandgap bulk semiconductors GeTe and SnTe, as well as heavy metals such as Pt. Sizable SHC, large spin Hall angles, and the ability to tune SHC via electric fields without altering the topological properties, rooted in the crystal field splitting, underscore the potential of these materials for spintronic applications.

Intrinsic spin Hall resonance in Bi-based Janus monolayers

Rashba spin-splitting and spin Hall effect in Janus monolayers Sb2XSX’ (X, X’= S, Se, or Te; X ≠ X’)

Intrinsic Quantum Spin Hall and Anomalous Hall Effects in H-Sb/bi Epitaxial Growth on a Ferromagnetic MnO2 Thin Film.

Spin-orbitronic materials with record spin-charge conversion from high-throughput ab initio calculations

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Tuning Rashba effect, band inversion, and spin-charge conversion of Janus X Sn 2 Y monolayers via an external field

Intrinsic Quantum Anomalous Hall Effect with In-Plane Magnetization: Searching Rule and Material Prediction.

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Enhanced Spin Hall Ratio in Two-Dimensional Semiconductors

Discrete Quantum Geometry and Intrinsic Spin Hall Effect

Intrinsic Ferroelectric Quantum Spin Hall Insulator in Monolayer Na3Bi with Surface Trimerization.

Intrinsic spin Hall effect from spin quantum metric

Spin Hall Effect in the Monolayer Janus Compound MoSSe Enhanced by Rashba Spin-Orbit Coupling

Prediction of Janus XYSTe (X=Li, Na; Y=Al, Ga, In) monolayers with tunable Rashba effect for spintronic devices

Exploring nonlinear Rashba effect and spin Hall conductivity in Janus MXenes W2COX (X = S, Se, Te)

Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence

Giant interfacial spin-Hall angle from Rashba-Edelstein effect revealed by the spin-Hall Hanle processes

Ab initio calculation of the intrinsic spin Hall effect in semiconductors.

Electric-field-driven ferromagnetic response in Janus MnReX3 (X=Se, S) monolayer via asymmetric interface orbital hybridization

Spin Hall effect emerging from a chiral magnetic lattice without spin-orbit coupling