Abstract:Van der Waals (vdW) assembly could efficiently modulate the symmetry of two-dimensional (2D) materials that ultimately governs their physical properties. Of particular interest is the ferroelectric polarization being introduced by proper vdW assembly that enables the realization of novel electronic, magnetic, and transport properties of 2D materials. Four-layer bulklike stacking antiferromagnetic MnBi2Te4 (FB-MBT) offers an excellent platform to explore ferroelectric polarization effects on magnetic order and topological transport properties of nanomaterials. Here, by applying symmetry analyses and density-functional-theory calculations, the ferroelectric interface effects on magnetic order, anomalous Hall effect (AHE) or even quantum AHE (QAHE) on the FB-MBT are analyzed. Interlayer ferroelectric polarization in FB-MBT efficiently violates the PT symmetry [the combination of central inversion (P) and time reverse ( T) symmetry] of the FB-MBT by conferring magnetoelectric couplings, and stabilizes a specific antiferromagnetic order encompassing a ferromagnetic interface in the FB-MBT. We predict that engineering an interlayer polarization in the top or bottom interface of FB-MBT allows converting FB-MBT from a trivial insulator to a Chern insulator. The switching of ferroelectric polarization at the middle interfaces results in a direction reversal of the quantum anomalous Hall current. Additionally, the interlayer polarization of the top and bottom interfaces can be aligned in the same direction, and the switching of polarization direction also reverses the direction of anomalous Hall currents. Overall, our work highlights the occurrence of quantum-transport phenomena in 2D vdW four-layer antiferromagnets through vdW assembly. These phenomena are absent in the bulk or thin-film in bulklike stacking forms of MnBi2Te4.

Switchable Anomalous Hall Effects in Polar-Stacked 2D Antiferromagnet MnBi 2 Te 4

Switchable anomalous Hall effects in polar-stacked 2D antiferromagnet MnBi2Te4

Interlayer Ferroelectric Polarization Modulated Anomalous Hall Effect in Four-Layer MnBi2Te4 Antiferromagnets

Interlayer ferroelectric polarization modulated anomalous Hall effects in four-layer MnBi2Te4 antiferromagnets

Polarity-tunable anomalous Hall effect in magnetic topological insulator MnBi2Te4

Pursuing High-Temperature Quantum Anomalous Hall Effect in MnBi$_2$Te$_4$/Sb$_2$Te$_3$ Heterostructures

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Switchable in-plane anomalous Hall effect by magnetization orientation in monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi 2 Te 4 Films

Intrinsic Layer-Polarized Anomalous Hall Effect in Bilayer MnBi2Te4

Angle Dependent Field-Driven Reorientation Transitions in Uniaxial Antiferromagnet MnBi2Te4 Single Crystal

Unconventional Anomalous Hall Effect and Large Anomalous Nernst Effect in Antiferromagnet SmMnBi2

Unveiling the Anomalous Hall Response of the Magnetic Structure Changes in the Epitaxial MnBi2Te4 Films.

In-plane Anomalous Hall Effect in PT-symmetric Antiferromagnetic Materials

Antisymmetric Magnetoresistance in a Van Der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure.

Unconventional Anomalous Hall Effect in the Canted Antiferromagnetic Half‐Heusler Compound DyPtBi

Quantum anomalous Hall insulator state in ferromagnetically ordered Mn Bi 2 Te 4 /V Bi 2 Te 4 heterostructures

Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

Angle dependent field-driven reorientation transitions in uniaxial antiferromagnet MnBi$_2$Te$_4$ single crystal

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops