Abstract:Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. Along these lines, in this work, the structure, storage mechanism, and improvement strategies of UltraRAM were systematically investigated to enhance storage window clarity and speed performance. First, the basic structure and working principle of UltraRAM were introduced, and its comparative advantages over traditional memory devices were highlighted. Furthermore, through the validation of the band structure and storage mechanism, the superior performance of UltraRAM, including its low operating voltage and excellent non-volatility, was further demonstrated. To address the issue of the small storage window, an improvement strategy was proposed by reducing the thickness of the channel layer to increase the storage window. The feasibility of this strategy was validated by performing a series of simulation-based experiments. From our analysis, a significant 80% increase in the storage window after thinning the channel layer was demonstrated, providing an important foundation for enhancing the performance of UltraRAM. Additionally, the data storage capability of this strategy was examined under the application of short pulse widths, and a data storage operation with a 10 ns pulse width was successfully achieved. In conclusion, valuable insights into the application of UltraRAM in the field of non-volatile storage were provided. Our work paves the way for further optimizing the memory performance and expanding the functionalities of UltraRAM.

A Review on Advanced Band-Structure Engineering with Dynamic Control for Nonvolatile Memory based 2D Transistors

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials

Circuit Level Memory Technologies and Applications based on 2D Materials

Integrated Memory Devices Based on 2D Materials

2D Heterostructures Induced Charge Transfer and Trapping for Hybrid Optically and Electrically Controllable Nonvolatile Memory

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices

Emerging 2D Memory Devices for In‐Memory Computing

Memory Materials and Devices: from Concept to Application

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Tunable non-volatile memories based on 2D InSe/ h-BN/GaSe heterostructures towards potential multifunctionality

Two-dimensional materials prospects for non-volatile spintronic memories

TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Non-volatile Memory Based on Atomic Crystals

Electronics Based on Two-Dimensional Materials: Status and Outlook

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

Recent advances in memristors based on two-dimensional ferroelectric materials

Resistive Memory Devices at the Thinnest Limit: Progress and Challenges

2D Materials-Based Static Random-Access Memory

Two-dimensional materials for next-generation computing technologies