Abstract:Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simplicity, and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO 1 , and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays 2–8 . However, finding comparable p-type counterparts poses significant challenges, impeding the progress of complementary metal-oxide-semiconductor (CMOS) technology and integrated circuits 9–11 . Here, we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium sub-oxide matrix, and demonstrate its utility in high-performance, stable p-channel TFTs, and complementary circuits. Theoretical analysis unveils a delocalised valence band from tellurium 5 p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p orbital connectivity, realising high-performance p-channel TFTs with an average field-effect hole mobility of ~15 cm 2 V −1 s −1 and on/off current ratios of 10 6 ~ 10 7 , along with wafer-scale uniformity and long-term stabilities under bias stress and ambient aging. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.

A complementary oxide semiconductor

Selenium alloyed tellurium oxide for amorphous p-channel transistors

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS

A native oxide high-kappa gate dielectric for two-dimensional electronics

III-V/Ge CMOS Device Technologies for High Performance Logic Applications

Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide

High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors

Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous network

Sub-5-nm Ultra-thin In$_2$O$_3$ Transistors for High-Performance and Low-Power Electronic Applications

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO$_3$ Interfaces

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Sub-5-nm Ultra-thin In_2O_3 Transistors for High-Performance and Low-Power Electronic Applications

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO3 Interfaces

Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors

One-volt oxide based complementary circuit

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide