Abstract:Artificial intelligence (AI) has revolutionized present-day life through automation and independent decision-making capabilities. For AI hardware implementations, the 6T-SRAM cell is a suitable candidate due to its performance edge over its counterparts. However, modern AI hardware such as neural networks (NNs) access off-chip data quite often, degrading the overall system performance. Compute-in-memory (CIM) reduces off-chip data access transactions. One CIM approach is based on the mixed-signal domain, but it suffers from limited bit precision and signal margin issues. An alternate emerging approach uses the all-digital signal domain that provides better signal margins and bit precision; however, it will be at the expense of hardware overhead. We have analyzed digital signal domain CIM silicon-verified 6T-SRAM CIM solutions, after classifying them as SRAM-based accelerators, i.e., near-memory computing (NMC), and custom SRAM-based CIM, i.e., in-memory-computing (IMC). We have focused on multiply and accumulate (MAC) as the most frequent operation in convolution neural networks (CNNs) and compared state-of-the-art implementations. Neural networks with low weight precision, i.e., <12b, show lower accuracy but higher power efficiency. An input precision of 8b achieves implementation requirements. The maximum performance reported is 7.49 TOPS at 330 MHz, while custom SRAM-based performance has shown a maximum of 5.6 GOPS at 100 MHz. The second part of this article analyzes the FinFET 6T-SRAM as one of the critical components in determining overall performance of an AI computing system. We have investigated the FinFET 6T-SRAM cell performance and limitations as dictated by the FinFET technology-specific parameters, such as sizing, threshold voltage (Vth), supply voltage (VDD), and process and environmental variations. The HD FinFET 6T-SRAM cell shows 32% lower read access time and 1.09 times better leakage power as compared with the HC cell configuration. The minimum achievable supply voltage is 600 mV without utilization of any read- or write-assist scheme for all cell configurations, while temperature variations show noise margin deviation of up to 22% of the nominal values.

Negative capacitance FET based dual-split control 6 T-SRAM cell design for energy efficient and robust computing-in memory architectures

Negative capacitance FET based dual-split control 6T-SRAM cell design for energy efficient and robust computing-in memory architectures

Computing in-memory reconfigurable (accurate/approximate) adder design with negative capacitance FET 6T-SRAM for energy efficient AI edge devices

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Analysing digital in-memory computing for advanced finFET node

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15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications

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