Abstract:Resistive switching (RS) can be divided into two categories, namely nonvolatile memory switching and volatile threshold switching, depending on the volatility. MoO3 is one type of versatile transition metal oxide with a high work function, large electron affinity and wide band gap for potential applications in electronics, optoelectronics, batteries and electrochromic devices. Herein, we report the transition from nonvolatile memory to volatile threshold switching in single MoO3 nanobelts simply by changing the electrodes from Au to Ag. The one-dimensional (1D) alpha-MoO3 nanobelts are synthesized by a hydrothermal method and annealed under different atmospheres to adjust the concentration of oxygen vacancies. The prepared single MoO3 nanobelt is used to serve as the RS layer to construct lateral two-terminal RS devices. By using Au as the electrodes, the MoO3 nanobelts exhibit typical nonvolatile bipolar memory RS behaviors. On the other hand, bidirectional threshold RS properties can be achieved by employing Ag as the electrodes due to the large contact resistance between Ag and MoO3. More importantly, the threshold RS performance is significantly enhanced by annealing the nanobelts in N-2. The ON/OFF current ratio is increased up to 3 x 10(5) while the threshold voltage is decreased down to 0.75 V. These results demonstrate the diverse RS behaviors in single 1D MoO3 nanobelts and potential applications in volatile and non-volatile switching devices. In addition, the finding provides guidelines for improvement and/or alternation of RS behaviors through defect engineering and/or device modification in the multifunctional emerging devices.

On Bidirectional Transition Between Threshold and Bipolar Switching in Ag/SiO /ITO Memristors

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

Transition from Nonvolatile Bipolar Memory Switching to Bidirectional Threshold Switching in Layered MoO3 Nanobelts

Realizing Bidirectional Threshold Switching in Ag/Ta2O5/Pt Diffusive Devices for Selector Applications

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Realizing Multimode of Resistive Switching in Single Ag/SiO2/Pt Device Via Tuning Forming Compliance Current

Understanding of the Volatile and Nonvolatile Switching in Ag-Based Memristors

Microscopic Origin of Transition from Threshold Switching to Memory Switching in Oxide-Electrolyte-Based Rram

Bi-Polar Synaptic Behavior of Pt/SiOx:Ag/TiOx/p++- Si Memristor

Coexistence of Digital and Analog Resistive Switching Behaviours in Ag/CuAlO<sub>2</sub>/TiO<sub>2</sub>/p<sup>++</sup>-Si Memristor

Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device

Effect on Resistive Switching by Inserting TiOx Thin Layer in SiOx: Ag-Based Memristor

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Dual-Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au-Co3O4 Thin-Film Memristors

Nonvolatile behavior of resistive switching memory in Ag/WO x /TiO y /ITO device based on WO x /TiO y heterojunction

Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p+-Si/n-ZnO Heterojunction Memristor

Synaptic and Digital Switching in Diffusion Effect‐Assisted Oxides for All‐Inorganic Flexible Memristor

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices