Abstract:The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density functional theory. We find that inclusion of many body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic and opti- cal properties of black phosphorus. While trilayer black phosphorus with a particular stacking type is found to be a metal by using semilocal functionals, it is predicted to have an electronic band gap of 0.82 eV when many-body effects are taken into account within the G0W0 scheme. Though different stacking types result in similar energetics, the size of the band gap and the optical response of bilayer and trilayer phosphorene is very sensitive to the number of layers and the stacking type. Regardless of the number of layers and the type of stacking, bilayer and trilayer black phosphorus are direct band gap semiconductors whose band gaps vary within a range of 0.3 eV. Stacking arrangments different from the ground state structure in both bilayer and trilayer black phosphorus significantly modify valence bands along the zigzag direction and results in larger hole effective masses. The optical gap of bilayer (trilayer) black phosphorus varies by 0.4 (0.6) eV when changing the stacking type. Due to strong interlayer interaction, some stackings obstruct the observation of the optical excitation of bound excitons within the quasi-particle band gap. In other stackings, the binding energy of bound excitons hardly changes with the type of stacking and is found to be 0.44 (0.30) eV for bilayer (trilayer) phosphorous.

Interlayer coupling effect in twisted stacked few layer black phosphorus revealed by abnormal blue shifts in Raman spectra

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

First-principle studies of twisted bilayer black phosphorus

Strain-Tunable Van Der Waals Interactions In Few-Layer Black Phosphorus

Remarkable effect of stacking on the electronic and optical properties of few layer black phosphorus

Layer-Dependent Ultrafast Carrier and Coherent Phonon Dynamics in Black Phosphorus.

Spectroscopic Signature of Interlayer Coupling in Black Phosphorus-Graphite Heterostructure

Angular resolved ultra-low frequency Raman spectroscopy of few-layer black phosphorous

Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus

Gate induced monolayer behavior in twisted bilayer black phosphorus

Ultralow-frequency Collective Compression Mode and Strong Interlayer Coupling in Multilayer Black Phosphorus

Stacking dependence of carrier transport properties in multilayered black phosphorous

Optical Phase Anisotropy In Layered Black Phosphorus

Spatially indirect excitons in black and blue phosphorene double layers

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Infrared fingerprints of few-layer black phosphorus

Semiconducting layered blue phosphorus: A computational study

Layer-dependent Electronic Properties of Phosphorene-Like Materials and Phosphorene-Based Van Der Waals Heterostructures.

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers