Electrical Sensing of Molecular Spin State Switching in a Spin Crossover Complex Using an Organic Field‐Effect Transistor

Yuteng Zhang,Seyed Ehsan Alavi,Ion Soroceanu,Dennis Wanyoike Kamau,Aurelian Rotaru,Isabelle Séguy,Lionel Salmon,Gábor Molnár,Azzedine Bousseksou
DOI: https://doi.org/10.1002/aelm.202400590
IF: 6.2
2024-09-09
Advanced Electronic Materials
Abstract:An organic semiconductor polymer is used to sense the spin states of transition metal complexes, in a transistor configuration. At the spin crossover, the current output changes reversibly by 70%, without apparent fatigue. Finite element analysis indicates that the current switching occurs due to the coupling of piezoresistive properties of the semiconductor with the volume change of the complexes. An organic semiconductor – spin crossover polymer composite heterostructure is fabricated, and it is integrated into an organic field‐effect transistor (OFET) with the aim to achieve electrical sensing of molecular spin state switching events. The OFETs display ≈50–70% increase in drain‐source current intensity when going from the low spin (LS) to the high spin (HS) state. This phenomenon is reversible without apparent fatigue and the application of a gate voltage significantly enhances the sensing sensitivity. Capacitance measurements and finite element calculations allow identifying mechanical stress, induced by the spin state switching, at the origin of the transistor response. These results open up appealing perspectives for the integration of spin crossover molecules into technological applications, such as soft robotics .
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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