Abstract:Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin polarization has been demonstrated in semiconductors and spin transistor structures using both the electrical and optical methods. However, an unsolved challenge in the field is the realization of all electrical methods to control the spin polarization and spin transistor operation at ambient temperature. For this purpose, two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS$_2$). Here we combine graphene and MoS$_2$ in a van der Waals heterostructure to realize the electric control of the spin polarization and spin lifetime, and demonstrated a spin field-effect transistor (spin-FET) at room temperature in a non-local measurement geometry. We observe electrical gate control of the spin valve signal due to pure spin transport and Hanle spin precession signals in the graphene channel in proximity with MoS$_2$ at room temperature. We show that this unprecedented control over the spin polarization and lifetime stems from the gate-tuning of the Schottky barrier at the MoS$_2$/graphene interface and MoS$_2$ channel conductivity leading to spin interaction with high SOC material. The all-electrical creation, transport and control of the spin polarization in a spin-FET device at room temperature is a substantial step in the field of spintronics. It opens a new platform for the interplay of spin, charge and orbital degrees of freedom for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures.

Electrical read-out of light-induced spin transition in thin film spin crossover/graphene heterostructures

Electrical sensing of the thermal and light induced spin transition in robust contactless spin-crossover/graphene hybrid devices

Contactless Spin Switch Sensing by Chemo-Electric Gating of Graphene.

Electrical Sensing of Molecular Spin State Switching in a Spin Crossover Complex Using an Organic Field‐Effect Transistor

Electrical Control of the Superconducting-to-Insulating Transition in Graphene/Metal Hybrids

Designing a mechanically driven spin-crossover molecular switch via organic embedding

Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors

High-performance Graphene-Integrated Thermo-Optic Switch: Design and Experimental Validation [Invited]

Spin‐State Switching of Spin‐Crossover Complexes on Cu(111) Evidenced by Spin‐Flip Spectroscopy

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

Electrical single spin read-out using an exchange-coupled quantum dot

Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

Ultrathin Epitaxial Cobalt Films on Graphene for Spintronic Investigations and Applications

Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

Optospintronics in graphene via proximity coupling

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Femtosecond spin-state switching dynamics of spin-crossover molecules condensed in thin films

Electrical gate control of spin current in van der Waals heterostructures at room temperature

Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene

Gate Switching of Ultrafast Photoluminescence in Graphene