Abstract:A comprehensive quantum transport study of ultrathin-body silicon double-gate pMOSFETs with gate length <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {14}$ </tex-math></inline-formula>, 10, and 7 nm is performed by in-house developed nonequilibrium Green’s function solver employing the six-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Hamiltonian. The effects of channel length, body thickness, as well as confinement and transport crystal orientations are studied systematically. Both <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> characteristics are analyzed in this paper. Furthermore, the CMOS performance benchmarking results, such as switching delay, energy consumption, and their product, are calculated with the influence of parasitic resistances and capacitances treated in an appropriate way. It is found that the crystal orientation effect on drive current is significant at both long and short channel lengths, while its effect on effective capacitance is more observable at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm. The drive current at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {14}$ </tex-math></inline-formula> nm and <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm can be well explained by average ballistic hole velocity and source-to-drain tunneling ratio, respectively. Meanwhile, the effective capacitance is not only determined by the density of states but also affected by the distribution of holes in the confined direction. Both intrinsic and extrinsic performance assessments suggest that (001)/[100] and (110)/[001] are the optimal confinement/transport crystal orientation configurations at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {7}$ </tex-math></inline-formula> nm, while <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110}{)}/[\overline {1}\textsf {10}]$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110})/[\overline {1}\textsf {11}]$ </tex-math></inline-formula> are the best choices at longer gate lengths. As <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}$ </tex-math></inline-formula> shrinks, both intrinsic and extrinsic performances will be better at a scaled body thickness.

Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Quantum Transport Study of Si Ultrathin-Body Double-Gate Pmosfets: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

Pulsed Excimer Laser Crystallization and Doping for the Fabrication of Poly-Si and -SiGe TFTs

Performance evaluation of polycrystalline Si1−xGex thin-film transistors fabricated by continuous-wave laser lateral crystallization on glass substrates

A Novel Two-Step Laser Crystallization Technique for Low-Temperature Poly-Si TFTs

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Crystallization of amorphous silicon on glass substrate by microwave annealing for thin-film-transistor applications

A Silicon Nanocrystal Tunnel Field Effect Transistor

Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

Green Laser Recrystallization of Poly-Sige Thin Films Deposited by RPCVD System

cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties