Abstract:A number of physical processes involving quantum dots depend critically upon the "evanescent" electron eigenstate wave function that extends outside of the material surface into the surrounding region. These processes include electron tunneling through quantum dots, as well as interactions between multiple quantum dot structures. In order to unambiguously determine these evanescent fields, appropriate boundary conditions have been developed to connect the electronic solutions interior to the semiconductor quantum dot to exterior vacuum solutions. In standard envelope function theory, the interior wave function consists of products of band edge and envelope functions, and both must be considered when matching to the external solution. While the envelope functions satisfy tractable equations, the band edge functions are generally not known. In this work, symmetry arguments in the spherically symmetric approximation are used in conjunction with the known qualitative behavior of bonding and antibonding orbitals to catalog the behavior of the band edge functions at the unit cell boundary. This physical approximation allows consolidation of the influence of the band edge functions to two simple surface parameters that are incorporated into the boundary conditions and are straightforwardly computed by using numerical first-principles quantum techniques. These new boundary conditions are employed to analyze an isolated spherically symmetric semiconductor quantum dot in vacuum within the analytical model of Sercel and Vahala [Phys. Rev. Lett. 65, 239 (1990); Phys. Rev. B 42, 3690 (1990)]. Results are obtained for quantum dots made of GaAs and InP, which are compared with ab initio calculations that have appeared in the literature.

Exact wave functions for an electron on a graphene triangular quantum dot

Electron dynamics in graphene with gate-defined quantum dots

Probing the zero energy shell wave functions of triangular graphene quantum dots with broken sublattice symmetry using a localized impurity

Exact Solutions of Two Electrons in a Quantum Dot

Modeling Klein Tunneling and Caustics of Electron Waves in Graphene

Electron confinement in graphene with gate-defined quantum dots

Delta-Function Spin-1/2 Fermions in A One-Dimensional Potential Well

Electron Scattering in Gapped Graphene Quantum Dots

Edge states in graphene quantum dots: Fractional quantum Hall effect analogies and differences at zero magnetic field

Imaging electrostatically confined Dirac fermions in graphene quantum dots

Zero-energy states in graphene quantum dots and rings

Efficient semiclassical approximation for bound states in graphene in magnetic field with a small trigonal warping correction

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Lorentzian quantum wells in graphene: the role of shape invariance in zero-energy states trapping

Quantum Dot Properties in the Multiband Envelope-Function Approximation Using Boundary Conditions Based Upon First-Principles Quantum Calculations

Multifractal wave functions of charge carriers in graphene with folded deformations, ripples or uniaxial flexural modes: analogies to the quantum Hall effect under random pseudomagnetic fields

Excitonic absorption in gate controlled graphene quantum dots

Accurate Quantum States for a 2D-Dipole

Quantum Confinement of Electron-Phonon Coupling in Graphene Quantum Dots

The Fock-Darwin States of Dirac Electrons in Graphene-based Artificial Atoms

Wigner localization in a graphene quantum dot with a mass gap