Stabilizing Distorted Ductile Semiconductors for Excellent Ductility and Thermoelectric Performance

Yumeng Wang,Qiyong Chen,Pengfei Qiu,Zhiqiang Gao,Shiqi Yang,Lili Xi,Jiong Yang,Xun Shi
DOI: https://doi.org/10.1002/adfm.202415008
IF: 19
2024-09-25
Advanced Functional Materials
Abstract:In this work, taking ductile semiconductors as an example, it is shown that the element gold (Au) is nearly immiscible in Ag2S and Ag2Te due to its large electronegativity, but it has a relatively high alloying limit in distorted Ag2S0.5Te0.5 meta‐phase, which significantly reduces carrier concentration to display a record‐high zT of 0.95 at 550 K with extraordinary ductility at room temperature. Element doping/alloying is a common strategy to tune the electrical and thermal transports of thermoelectric (TE) materials, but the doping/alloying limit of foreign elements in many TE materials is usually very low, bringing a great challenge to improve the TE performance. In this work, beyond the classic principle of "like dissolves like," it is found that choosing the compound with a severely distorted lattice and diversified chemical bonding as the matrix also facilitates achieving a high doping/alloying limit. Taking ductile semiconductors as an example, this work shows that gold (Au) element is nearly immiscible in Ag2S and Ag2Te, but has a relatively high alloying limit in complex Ag2S0.5Te0.5 meta‐phase. Au in Ag2S0.5Te0.5 significantly decreases the carrier concentration and improves the TE performance, but scarcely changes the mechanical properties. Consequently, Ag1.99Au0.01S0.5Te0.5 demonstrates both a high figure‐or‐merit of 0.95 at 550 K and extraordinary room‐temperature ductility. This work offers an effective and general strategy to develop stabilized doped/alloyed TE materials.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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