Abstract:Icosahedral boron-rich solids fall second in hardness to diamondlike structures and have been the subject of intense investigations over the past two decades, as they possess low density, high thermal, and mechanical stability at high temperatures, and superior industrial manufacturability. A common deleterious feature called "presssure-induced amorphization," limits their performance in high-velocity projectile applications. This article discusses spectral characteristics of amorphized states of boron carbide, a common icosahedral boron-rich ceramic, with the goal of understanding the mechanistic layout of pressure-induced amorphization. Mystery has surrounded the appearance of new peaks in Raman spectrum of pressure-induced amorphized boron carbide, but to date, no convincing explanation exists on their origin. Shock studies of boron carbide have proposed phase transformation at high pressures, but to date, no conclusive evidence has been corroborative to prove the existence of new high-pressure phases. We propose a new rationale toward deciphering the amorphization phenomenon in boron carbide centered on a thermodynamic approach to explain atomic interactions in amorphous islands. Quantum mechanical simulations are utilized to understand the impact of stresses on Raman spectra, while results from molecular dynamics (MD) simulations of volumetric compression are used to understand thermodynamic aspects of amorphization. Atomic-level nonbonded interactions from the MD potential are utilized to demonstrate origins of the residual pressure. Combining these efforts, the present study deciphers the connection between deformation behavior of boron carbide at high pressure and its mysterious amorphous Raman spectrum. The approach highlights the importance of meticulously incorporating multiscale modeling considerations in determining accurate material behavior of ultrahard materials.

When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature

Theoretical phase diagram of boron carbide from ambient to high pressure and temperature

Comparison of solid state crystallization of boron polymorphs at ambient and high pressures

Direct Synthesis of Sp3‐hybridized BCN Compound by High Pressure and Temperature

High-pressure deformation and amorphization in boron carbide

Ionic high-pressure form of elemental boron

Highly Boron-Doped Graphite and Diamond Synthesized From Adamantane and Ortho-Carborane under High Pressure

High-Pressure High-Temperature X-Ray Diffraction Of Beta-Boron To 30 Gpa

Carbon contamination of elemental beta-boron promoted a stable boron carbide by spark plasma sintering

First non-icosahedral boron allotrope synthesized at high pressure and high temperature

High-pressure Phases of Boron Arsenide with Potential High Thermal Conductivity

High pressure and high temperature synthesis of a new boron carbide phase

Understanding the role of flux, pressure and temperature on polymorphism in ThB 2 O 5

Synthesis and Thermal Oxidation Resistance of Boron-Rich Boron-Carbide Material

The formation of sp3 bonding in compressed BN

The Formation of Sp 3 Bonding in Compressed BN

Phase transitions, mechanical properties and electronic structures of novel boron phases under high-pressure: A first-principles study

Superconducting boron allotrope featuring pentagonal bipyramid at ambient pressure

Effects of chain configuration and stoichiometry on the behavior of boron carbide from first-principle calculations

Fabrication and characterization of hot-pressed B-rich boron carbide

Pressure-Induced Transformations Of Molecular Boron Hydride