Abstract:The advent of a laser micro‐welding process for semiconductor technologies is highly desirable. Using nanosecond pulses, a solution to the severe optical limitations on the delivered energy with intense infrared light is demonstrated. Shear joining strengths exceeding 10 MPa are systematically obtained on silicon and gallium arsenide sample combinations. This introduces an efficient and flexible manufacturing process holding great promises. Laser micro‐welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon (Si) and other technology‐essential semiconductors. Concentrating on circumventing the optical limits on the deliverable energy density at interfaces between narrow‐gap materials with intense infrared light, the first feasibility demonstration of transmission laser welding between Si workpieces using nanosecond laser pulses is made. A shear joining strength of 32 ± 10 MPa which compares very favorably to the complex process alternatives is obtained. Supported by experiments repeated on different material combinations including gallium arsenide, it is confirmed that this remarkable performance level is achievable for similar and dissimilar semiconductors. The demonstrations rely on a small footprint fiber laser, an aspect that holds great promises for the advent of a high‐efficiency flexible process beneficial for important technology developments including lab‐on‐a‐chip and hybrid semiconductor systems.

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