Direct Application of Carbon Nanotubes (CNTs) Grown by Chemical Vapor Deposition (CVD) for Integrated Circuits (ICs) Interconnection: Challenges and Developments

Zhenbang Chu,Baohui Xu,Jie Liang
DOI: https://doi.org/10.3390/nano13202791
IF: 5.3
2023-10-19
Nanomaterials
Abstract:With the continuous shrinkage of integrated circuit (IC) dimensions, traditional copper interconnect technology is gradually unable to meet the requirements for performance improvement. Carbon nanotubes have gained widespread attention and research as a potential alternative to copper, due to their excellent electrical and mechanical properties. Among various methods for producing carbon nanotubes, chemical vapor deposition (CVD) has the advantages of mild reaction conditions, low cost, and simple reaction operations, making it the most promising approach to achieve compatibility with integrated circuit manufacturing processes. Combined with through silicon via (TSV), direct application of CVD-grown carbon nanotubes in IC interconnects can be achieved. In this article, based on the above background, we focus on discussing some of the main challenges and developments in the application of CVD-grown carbon nanotubes in IC interconnects, including low-temperature CVD, metallicity enrichment, and contact resistance.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
What problem does this paper attempt to address?
The main problem this paper attempts to address is: As the size of integrated circuits (ICs) continues to shrink, traditional copper interconnect technology gradually fails to meet the demand for performance improvement. Carbon nanotubes (CNTs) have been widely studied as a potential alternative to copper due to their excellent electrical and mechanical properties. The paper mainly discusses the challenges and developments in the application of directly growing carbon nanotubes in integrated circuit interconnects through the chemical vapor deposition (CVD) method, including low-temperature CVD, enrichment of metallic carbon nanotubes, and contact resistance issues. Specifically, the paper focuses on the following three main challenges: 1. **Controlling CVD growth temperature**: To be compatible with IC manufacturing processes, the CVD growth temperature needs to be controlled below 500°C. 2. **Enrichment of metallic carbon nanotubes**: Achieving the enrichment of metallic carbon nanotubes to improve their electrical conductivity. 3. **Reducing contact resistance**: Reducing the contact resistance between the metal catalyst used as an electrode and the grown carbon nanotubes. By addressing these challenges, the paper aims to provide references and insights for future research, promoting the practical application of carbon nanotubes in integrated circuit interconnects.