Abstract:Bottom-up self-assembly of high-density block-copolymer nanopatterns is of significant interest for a range of technologies, including memory storage and low-cost lithography for on-chip applications. The intrinsic or native spacing of a given block copolymer is dependent upon its size (N, degree of polymerization), composition, and the conditions of self-assembly. Polystyrene-block-polydimethylsiloxane (PS-b-PDMS) block copolymers, which are well-established for the production of strongly segregated single-layer hexagonal nanopatterns of silica dots, can be layered sequentially to produce density-doubled and -tripled nanopatterns. The center-to-center spacing and diameter of the resulting silica dots are critical with respect to the resulting double- and triple-layer assemblies because dot overlap reduces the quality of the resulting pattern. The addition of polystyrene (PS) homopolymer to PS-b-PDMS reduces the size of the resulting silica dots but leads to increased disorder at higher concentrations. The quality of these density-multiplied patterns can be calculated and predicted using parameters easily derived from SEM micrographs of corresponding single and multilayer patterns; simple geometric considerations underlie the degree of overlap of dots and layer-to-layer registration, two important factors for regular ordered patterns, and clearly defined dot borders. Because the higher-molecular-weight block copolymers tend to yield more regular patterns than smaller block copolymers, as defined by order and dot circularity, this sequential patterning approach may provide a route toward harnessing these materials, thus surpassing their native feature density.

Self-Assembly of Hierarchical Silicon-Containing Block Copolymers with Cross-Linkable 3 nm Smectic Motifs for Nanopatterning and Osmotic Energy Conversion Membranes

Directed Self-Assembly of Hierarchical Supramolecular Block Copolymer Thin Films on Chemical Patterns

Boundary-Directed Epitaxy of Block Copolymers

Hierarchical Self-Assembly of Spider Silk-Like Block Copolymers

Multiple-Patterning Nanosphere Lithography for Fabricating Periodic Three-Dimensional Hierarchical Nanostructures.

Selective Solvent Vapor Induced Self-Assembly of Silicon-Containing Bottlebrush Block Copolymer Thin Films to Generate Mesoporous Silicon Oxide Patterns

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Core-Shell and Zigzag Nanostructures from a Thin Film Silicon-Containing Conformationally Asymmetric Triblock Terpolymer

Sequential Self-Assembly of Polystyrene- block-Polydimethylsiloxane for 3D Nanopatterning via Solvent Annealing

Sequential Nanopatterned Block Copolymer Self-Assembly on Surfaces.

Fabrication of Nanodevices Through Block Copolymer Self-Assembly

Post-directed-self-assembly Membrane Fabrication for in Situ Analysis of Block Copolymer Structures

Highly Tunable Complementary Micro/Submicro-Nanopatterned Surfaces Combining Block Copolymer Self-Assembly and Colloidal Lithography.

Dual-Phase Separation in a Semiconfined System: Monodispersed Heterogeneous Block-Copolymer Membranes for Cell Encoding and Patterning.

Hierarchically Engineered Nanostructures from Compositionally Anisotropic Molecular Building Blocks

Block Copolymer Self‐Assembly Directed Synthesis of Porous Materials with Ordered Bicontinuous Structures and Their Potential Applications

Synthesis and Morphology Studies of Polysiloxane-based Triblock Copolymers

Directed self-assembly of high-chi block copolymer for nano fabrication of bit patterned media via solvent annealing

Freestanding Block Copolymer Membranes with Tunable Pore Sizes Promoted by Subnanometer Nanowires

Hierarchically Ordered Silicon Metastructures from Improved Self-Assembly-Based Nanosphere Lithography