Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO 2 Interface

Mengdie Lan,Gaosheng Yan,Wenshan Yu,Shengping Shen
DOI: https://doi.org/10.1021/acsami.4c03418
IF: 9.5
2024-04-21
ACS Applied Materials & Interfaces
Abstract:The properties of the Cu/SiO(2) interface usually deteriorate in the complex atmospheric environment, which may limit its performance and application in the engineering. Using the reactive molecular dynamics method, we investigate how the mechanical behaviors of the Cu/SiO(2) interface change as it interacts with oxygen impurities. The interfacial oxidation degree could be enhanced as O(2) penetrates into the interface area. This makes the interfacial structure disordered and is not conducive to...
materials science, multidisciplinary,nanoscience & nanotechnology
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