Oxygen Manipulation at the Co/SiO 2 Interface and Its Effect on Spin-Dependent Transport Properties

Qian Liu,Yaqiang Tian,Xiaoping Zheng,Liansheng Chen,Yuqing Zhao,Shaolong Jiang
DOI: https://doi.org/10.1007/s00339-020-03680-6
2020-01-01
Applied Physics A
Abstract:Oxygen manipulation at ferromagnetic metal (FM)/oxide heterointerfaces has been proved to be significantly effective in tailoring magnetic and transport properties. Herein, oxygen migration at the Co/SiO 2 interface with the aid of post-annealing treatment induces an enhancement of the anomalous Hall effect (AHE) for Pt/[Co/Pt] 2 /Co/SiO 2 /Pt multilayers, which is identified by X-ray photoelectron spectroscopy. Nevertheless, there is not oxygen migration phenomenon at the SiO 2 /Co interface and the AHE is weakened due to Co–Pt interdiffusion during the annealing process for Pt/SiO 2 /Co/[Pt/Co] 2 /Pt multilayers. This work may pave the way toward the application of FM/oxide heterointerfaces in spintronic devices.
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