High magnetic field sensor using LaSb2

D. P. Young,R. G. Goodrich,J. F. DiTusa,S. Guo,P. W. Adams,Julia Y. Chan,Donavan Hall
DOI: https://doi.org/10.1063/1.1577390
IF: 4
2003-05-26
Applied Physics Letters
Abstract:The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the layers. Below 10 K the perpendicular magnetoresistance of LaSb2 becomes temperature independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a high field carrier density of n∼3×1020 cm−3. The feasibility of using LaSb2 for magnetic field sensors is discussed.
physics, applied
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