Thickness-dependent transport in epitaxial CaIrO3 perovskite thin films

Lindgren, Emily R.,Zheng, Xin Y.,Channa, Sanyum,Jiang, Jack M.,Lee, Young S.
DOI: https://doi.org/10.1557/s43579-024-00681-x
2024-12-18
MRS Communications
Abstract:The coexistence of strong electron–electron correlation and strong spin–orbit coupling makes CaIrO3 a promising candidate for the exploration of emergent phenomena in thin film form. We have realized epitaxial CaIrO3 films on (La0.18Sr0.82)(Al0.59Ta0.41)O3 single crystal substrates with excellent crystallinity and thicknesses ranging from 3 to 32 nm. Electronic properties range from semiconducting to insulating behavior as a function of decreasing thickness and correlate with increased tetragonal distortion due to substrate-imposed strain. Hall effect measurements indicate that conduction is dominated by electron-type carriers at room temperature but crosses over to transport dominated by hole-like carriers at lower temperatures. Longitudinal magnetoresistance measurements reveal both a quadratic Lorentz dependence and an additional positive component in the field dependence that cannot be explained purely by semi-classical orbital magnetoresistance effects.
materials science, multidisciplinary
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