Abstract:Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe2/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (T = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A'1 (WSe2) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe2 monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe2 monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX0 at double resonance condition is observed for the first time.

Heterostrain-Induced Zeeman-like Splitting in h-BN-Encapsulated Bilayer WSe 2

Correction to "Heterostrain-Induced Zeeman-like Splitting in h-BN-Encapsulated Bilayer WSe 2 "

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Strain regulated interlayer coupling in WSe 2 /WS 2 heterobilayer

Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe2 Monolayer

Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe 2 Monolayer

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Anisotropic strain effect on structural and electronic properties in WSe2/ZnO mixed-dimensional heterostructure

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Effect of strain engineering on magnetism-induced valley splitting in WSe 2 based on the WSe 2 /CrSe 2 heterojunction

Strain-Enabled Giant Second-Order Susceptibility in Monolayer WSe$_2$

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments

Bilayer WSe2 as a natural platform for interlayer exciton condensates in the strong coupling limit

The Electronic and Optical Properties of PC6/WS2 Heterostructure Modulated Via Biaxial Strain and External Electric Field

Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures

Stacking-dependent Exciton Multiplicity in WSe2 Bilayers

Strain tuning of the Curie temperature and valley polarization in two dimensional ferromagnetic WSe2/CrSnSe3 heterostructure

Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS 0.6 Se 1.4 .

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Observation of Split Defect-Bound Excitons in Twisted WSe2/WSe2 Homostructure

Hybridized intervalley moiré excitons and flat bands in twisted WSe$_2$ bilayers