Recent progress on defect-engineered ferroelectric HfO2:A next step moves forward by multiscale structural optimization

Fengjun Yan,Yao Wu,Yilong Liu,Pu Ai,Shi Liu,Shiqing Deng,Kan-Hao Xue,Qiuyun Fu,Wen Dong
DOI: https://doi.org/10.1039/d3mh01273e
IF: 13.3
2023-11-29
Materials Horizons
Abstract:The discovery of unconventional scale-free ferroelectricity in HfO 2 -based fluorite thin films has attracted great attention in recent years for their promising applications in low-power logic and nonvolatile memories. The ferroelectricity origin of HfO2 is intrinsically originated from widely accepted ferroelectric metastable orthorhombic Pca2 1 phase. In the last decade, defect-doping/solid solution shows excellent prospect to enhance and stabilize the ferroelectricity via isovalent or aliovalent defect-engineering. Here, the recent advances in defect-engineered HfO 2 -based ferroelectrics were first reviewed, including mono-ionic doping and mixed ion-doping progresses. Then, the defect-lattice correlation, the point-defect promoted phase transition kinetics, and the interface-engineered dynamic behaviour of oxygen vacancy were summarized. In addition, the thin film preparation and ion bombardment doping were summarized. Finally, the outlook and challenges were discussed. A multiscale structural optimization approach is suggested for further property optimization. This article not only covers an overview of the state-of-art advances of defects in fluorite ferroelectrics, but also future prospects that may inspire their further property-optimization via defect-engineering.
materials science, multidisciplinary,chemistry
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