Abstract:This study demonstrates the co‐existence of magnetoresistance and memristive properties in MgO‐based tunnel junctions. Devices are suitable for magnetic field sensing applications. As memristors, they show a 2000% resistance change with a quasi‐analog control. Memristive switching can be utilized to suppress and recover spintronic functionalities, paving the way for integrated memristors and spintronic devices in reprogrammable circuits for various applications. Magnetic tunnel junctions (MTJs) and memristors are two key emerging nanotechnologies that attracted significant interest for potential applications at the forefront of the digital revolution, including sensing, data storage, and non‐conventional computation. The co‐integration of these phenomena into a single multifunctional device is an important step toward harnessing the re‐programmability of memristive systems with the high yield and varied functionality of MTJs. This study demonstrates the co‐existence of magnetoresistance and memristive properties on MgO‐based MTJs. These devices show a magnetoresistance with a linear response as a function of a magnetic field and no hysteresis, which are the requirements for good magnetic field sensors, as well as demonstrating a non‐volatile and quasi‐analogue memristive behavior as a function of an applied electrical field down to nanosecond pulses. Furthermore, by doping the oxide barrier, the memristive power consumption is lowered by 20% giving the multi‐functionality of the devices a promising scalability potential. This study also shows that, memristive switching can be reversibly used to completely suppress and recover the spintronic functionalities. These results can pave the way for a seamless co‐integration of memristors and spintronic devices in complex reprogrammable circuits addressing applications such as reprogrammable multifunctional field sensor arrays and neuromorphic computing.

Switching characteristics of MgO-based MTJ with intermediate state

Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction

Switching Properties in Magnetic Tunnel Junctions with Interfacial Perpendicular Anisotropy: Micromagnetic Study

Voltage-gated spin-orbit torque switching in IrMn-based perpendicular magnetic tunnel junctions

Magnetization Reversal of Magnetic Tunnel Junctions by Low-Current Pulses

Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

Pulse Shaping Strategies for Efficient Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque

Field-free reliable magnetization switching in a three-terminal perpendicular magnetic tunnel junction via spin-orbit torque, spin-transfer torque, and voltage-controlled magnetic anisotropy

Spin-Transfer-Induced Magnetization Switching In Magnetic Tunnel Junctions

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device

Experiments and SPICE Simulations of Double MgO-based Perpendicular Magnetic Tunnel Junction*

Anomalous switching pattern in the ferrimagnetic memory cell

A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory

Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque

Ultra-highly efficient SOT-writing in MTJs with strain-induced magnetic anisotropy

Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling

Unipolar Switching of Perpendicular Mtj for STT-MRAM Application

Thermal Characterization of Ultrathin MgO Tunnel Barriers

Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Magnetization dynamics at finite temperature in CoFeB-MgO based MTJs