Low‐power and Field‐free Perpendicular Magnetic Memory Driven by Topological Insulators
Baoshan Cui,Aitian Chen,Xu Zhang,Bin Fang,Zhaozhuo Zeng,Peng Zhang,Jing Zhang,Wenqing He,Guoqiang Yu,Peng Yan,Xiufeng Han,Kang L. Wang,Xixiang Zhang,Hao Wu
DOI: https://doi.org/10.1002/adma.202302350
IF: 29.4
2023-05-06
Advanced Materials
Abstract:Giant spin‐orbit torque (SOT) from topological insulators (TIs) has great potential for the low‐power SOT‐driven magnetic random‐access memory (SOT‐MRAM). Here, we demonstrate the functional 3‐terminal SOT‐MRAM device by integrating the TI [(BiSb)2Te3] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. The ultralow switching current density of 1.5 × 105 A cm−2 is achieved in the TI‐pMTJ device at room temperature, which is 1–2 orders of magnitude lower than that in conventional heavy metals‐based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2Te3. Furthermore, all‐electrical field‐free writing is realized by the synergistic effect of a small spin‐transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (> 10 years) of the TI‐pMTJ device. This work sheds light to the future low‐power, high‐density, and high‐endurance/retention magnetic memory technology based on quantum materials. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology