Abstract:Recently, experimental results have demonstrated that perpendicular magnetic tunnel junction (p-MTJ) with the antiferromagnetic(AFM)/ferromagnetic (FM)/oxide structure can achieve field-free spin-orbit torque (SOT) switching since the AFM metal strip can not only generate the SOT, but also provide an exchange bias (HEX), making it suitable for practical applications. However, owing to that the HEX is weak, such field-free SOT switching is incomplete, thus resulting in severe switching reliability. In addition, a large SOT switching current (ISOT) is also required, leading to high switching energy dissipation. In this paper, to address these issues, the voltage-controlled magnetic anisotropy (VCMA) is introduced to assist the SOT switching, and such novel switching method is referred as voltage-gated SOT (VGSOT). First, we develop a physics-based compact model for the three-terminal VGSOT-MTJ device, which includes three modules, i.e., the electrical module, the tunnel magnetoresistance module and the dynamic switching module. Then, the impact of the VCMA effect on the field-free SOT switching is investigated by solving a modified Landau-Lifshitz-Gilbert (LLG) equation with consideration of the VCMA, SOT and HEX. Simulation results show that thanks to the introduction of the VCMA effect, the critical ISOT can be reduced greatly, and the incomplete field-free SOT switching can be completed. With further analysis, we obtain a special switching condition, under which complete SOT field-free switching can be achieved with a shortest path and ultra-low power. Moreover, a novel write pulse scheme is proposed to achieve high speed and reliability.

Pulse Shaping Strategies for Efficient Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

Tuning nanosecond switching of spin-orbit torque driven magnetic tunnel junctions

Impact of Spin-Orbit Torque on Spin-Transfer Torque Switching in Magnetic Tunnel Junctions

Field-free reliable magnetization switching in a three-terminal perpendicular magnetic tunnel junction via spin-orbit torque, spin-transfer torque, and voltage-controlled magnetic anisotropy

Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions

Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device

Field-free Spin–orbit-Torque Switching of Perpendicular Magnetization Aided by Uniaxial Shape Anisotropy

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Experimental Demonstration of Efficient Spin-Orbit Torque Switching of an MTJ with sub-100 ns Pulses

Fast, low-current spin-orbit torque switching of magnetic tunnel junctions through atomic modifications of the free layer interfaces

Compact Modeling and Analysis of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions

Role of Micromagnetic States on Spin-Orbit Torque-Switching Schemes.

The Physics of Spin-Transfer Torque Switching in Magnetic Tunneling Junctions in Sub-10 Nm Size Range

A Study of Perpendicular-Anisotropy Magnetic Tunnel Junction Switched by Spin-Hall-assisted Spin-Transfer Torque

High-performance Type-y Spin-orbit Torque MRAM Devices

Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction