Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Bandgap Engineering of 2D Materials toward High-Performing Straintronics

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Straintronics with Van Der Waals Materials

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Strain‐Engineered 2D Materials: Challenges, Opportunities, and Future Perspectives

Strain-engineered growth of two-dimensional materials

Manipulating 2D Materials through Strain Engineering

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic and Optical Properties

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Strain engineering in power-generating and self-powered nanodevices

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Valleytronics Meets Straintronics: Valley Fine Structure Engineering of 2D Transition Metal Dichalcogenides

Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

Strain engineering of two‐dimensional materials: Methods, properties, and applications

Strain engineering in semiconducting two-dimensional crystals

Strain engineering of two-dimensional materials for energy storage and conversion applications

Strain Engineering: Electromechanical Properties of Graphene

Strain engineering in 2D FETs: Physics, status, and prospects

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals