Photoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunction

xuanyan zhao
DOI: https://doi.org/10.1088/2053-1591/ad4e0c
IF: 2.025
2024-05-21
Materials Research Express
Abstract:Photoelectric synapses are attaching intensive attention due to its low power consumption and adaptive learning. However, traditional ferroelectric field effect transistors are not conducive to the integrated application in artificial intelligence systems. Here, we design the all two-dimensional photoelectric synapse device based on WSe2/MoS2/α-In2Se3 ferroelectric van der Waals heterojunction, which has high memory capacity (memory on/off = 105) and synaptic function. In addition, we simulate an artificial neural network to modify the handwritten digit recognition of the National Institute of Standards and Technology. In particular, the recognition rates are 92.4% and 93.6% for electrical synapse and photoelectric synapse, respectively. This work provides an effective strategy for achieving stable integration of neuromorphic computing.
materials science, multidisciplinary
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