Abstract:The ecofriendly tin selenide (SnSe) is expected to find multiple applications in optoelectronic, photovoltaic, and thermoelectric systems. This work is focused on the thermoelectric properties of thin films. SnSe single crystals exhibit excellent thermoelectric properties, but it is not so in the case of polycrystalline bulk materials. The investigations were motivated by the fact that nanostructuring may lead to an improvement in thermoelectric efficiency, which is evaluated through a dimensionless figure of merit, ZT = S2 σ T/λ, where S is the Seebeck coefficient (V/K), σ is the electrical conductivity (S/m), λ is the thermal conductivity (W/mK), and T is the absolute temperature (K). The main objective of this work was to obtain SnSe films via magnetron sputtering of a single target. Instead of common radiofrequency (RF) magnetron sputtering with a high voltage alternating current (AC) power source, a modified direct current (DC) power supply was employed. This technique in the classical version is not suitable for sputtering targets with relatively low thermal and electrical conductivity, such as SnSe. The proposed solution enabled stable sputtering of this target without detrimental cracking and arcing and resulted in high-quality polycrystalline SnSe films with unprecedented high values of ZT equal to 0.5 at a relatively low temperature of 530 K. All parameters included in ZT were measured in one setup, i.e., Linseis Thin Film Analyzer (TFA). The SnSe films were deposited at sputtering powers of 120, 140, and 170 W. They had the same orthorhombic structure, as determined by X-ray diffraction (XRD), but the thickness and microstructure examined by scanning electron microscopy (SEM) were dependent on the sputtering power. It was demonstrated that thermoelectric efficiency improved with increasing sputtering power and stable values were attained after two heating–cooling cycles. This research additionally provides further insights into the DC sputtering process and opens up new possibilities for magnetron sputtering technology.

What problem does this paper attempt to address?

The main focus of this paper is to explore the impact of different sputtering powers on the properties of tin selenide (SnSe) thin films, particularly in terms of thermoelectric performance improvement. The core objective of the research is to prepare high-quality SnSe thin films using magnetron sputtering technology and to evaluate how changes in sputtering power affect the thermoelectric performance metrics of these films. Specifically, the researchers used an improved direct current (DC) power supply for magnetron sputtering to overcome issues encountered in traditional radio frequency (RF) magnetron sputtering, such as target cracking and arcing phenomena. The key performance indicators they focused on include the Seebeck coefficient, electrical conductivity, thermal conductivity, and the figure of merit (ZT). The study found that as the sputtering power increased from 120 watts to 170 watts, the thickness, crystallinity, and microstructure of the SnSe films improved, leading to a significant enhancement in thermoelectric performance. At 530 K, the films obtained at the highest sputtering power achieved an unprecedented high ZT value of 0.5. Additionally, all parameters related to ZT were measured using the same equipment (Linseis Thin Film Analyzer, TFA), ensuring consistency and reliability of the results. In conclusion, this study aims to improve the thermoelectric performance of SnSe thin films by optimizing the sputtering power during the magnetron sputtering process, and it successfully demonstrates the effectiveness of this improvement method.

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