Buffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors

Min Gao,Zhi-Jun Zhao,Hyeonggyun Kim,Mingliang Jin,Panpan Li,Taehwan Kim,Kyungnam Kang,Incheol Cho,Jun-Ho Jeong,Inkyu Park
DOI: https://doi.org/10.1021/acsami.0c08977
2020-07-27
Abstract:The high surface-to-volume ratio of nanostructured materials is the key factor for excellent performance when applied to chemical sensors. In order to achieve this by a facile and low-cost fabrication strategy, buffered oxide etchant (BOE) treatment of a silicon (Si)-based sensor was proposed. An n<sup>+</sup>–n<sup>–</sup>–n<sup>+</sup> Si nanofilm structure was treated with a BOE, and palladium nanoparticles (PdNPs) were coated on the n-type Si channel surface via short-time electron beam evaporation to enable a highly sensitive and selective sensing of hydrogen (H<sub>2</sub>) gas. The BOE treatment effect on lightly doped n-type Si was investigated, and the surface morphology of the etched Si was analyzed. Furthermore, the H<sub>2</sub> sensing characterization of PdNP-decorated Si devices with various BOE treatment times was systematically evaluated at room temperature. The results revealed that the surface of n-type Si is roughened by BOE treatment, which can further enhance the H<sub>2</sub>-sensing performance of Pd-decorated Si. The elaborate study on the BOE-post-treated Si H<sub>2</sub> sensor showed that the performance enhancement was stable. The BOE treatment strategy was also applied to the nanopatterned Si sensors, which induced a clear performance enhancement for the H<sub>2</sub> sensing.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08977?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08977</a>.Optical images and SEM images of the BOE-etched Si surface; <i>I</i>–<i>V</i> curve of the devices with different BOE etching times; schematic illustration of H<sub>2</sub> gas sensing mechanism for Pd-decorated Si-sensing devices; schematic illustration of BOE treatment for a Si nanofilm device with and without Pd decoration; lower H<sub>2</sub> concentration sensing performance; fabrication process for the Si nanomesh structure by nanosphere lithography; and gas sensing test setups (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08977/suppl_file/am0c08977_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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