Abstract:We fabricated (00/) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 angstrom and ferroelectric polarization of 82 mu C/cm(2) for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 angstrom and 51 mu C/cm(2) for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (P-f-V-f) hysteresis loops in both semiconducting thin films. P-f-V-f hysteresis loops after 1 mu s-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K. (C) 2015 The Japan Society of Applied Physics

Domain switching energies: Mechanical versus electrical loading in La-doped bismuth ferrite–lead titanate

Morphology and Mobility of 90° Domains in La-substituted Bismuth Titanate

Domain Wall Conductivity in La-DopedBiFeO3

Relaxor Ferroelectric Characteristics And Temperature-Dependent Domain Structure In A (110)-Cut (Pbmg1/3nb2/3o3)(0.75)(Pbtio3)(0.25) Single Crystal

Domain Structure and In-Plane Switching in a Highly Strained Bi0.9Sm0.1FeO3 Film

Composition, Electric-Field and Temperature Induced Domain Evolution in Lead-Free Bi0.5Na0.5TiO3-BaTiO3-SrTiO3 Solid Solutions by Piezoresponse Force Microscopy

Competitive mechanism of temperature-dependent electrical properties in BiFeO3-BaTiO3 ferroelectrics controlled by domain evolution

Diffuse Ferroelectric Phase Transition and Relaxor Behaviors in Ba-Based Bismuth Layer-Structured Compounds and La-Substituted SrBi4Ti4O15

Poling-induced Inverse Time-Dependent Microstrain Mechanisms and Post-Poling Relaxation in Bismuth Ferrite

Low Voltage Performance Of Epitaxial Bifeo3 Films On Si Substrates Through Lanthanum Substitution

Domain Switching Kinetics in Ferroelectric-Resistive BiFeO3 Thin Film Memories

Priority of Domain Wall Pinning During the Fatigue Period in Bismuth Titanate Ferroelectric Thin Films

Local electrical conduction in polycrystalline La-doped BiFeO₃ thin films.

Structure evolution and energy band modulation in Ba-doped BiFeO3 thin films

Domain Engineering the Flexoelectric Response of BaTiO3–SrTiO3 Binary Films: A Phase Field Study

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Doping Effect on the Dielectric Property in Bismuth Titanate

Stability, Evolution and Switching of Ferroelectric Domain Structures in Lead-free BaZr$_{0.2}$Ti$_{0.8}$O$_3$-Ba$_{0.7}$Ca$_{0.3}$TiO$_3$ System: Thermodynamic Analysis and Phase-field Simulations

Multi-step Domain Switching and Polarization Fatigue in [110]-Oriented 0.67Pb(mg1/3nb2/3)o3-0.33Pbtio3 Single Crystals

Electric Induced Domain Switching of PLZT by In-Situ XRD Measurements

Switching fatigue of ferroelectric layered-perovskite thin films: temperature effect