A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Kevin Ye,Ida Sadeghi,Michael Xu,Jack Van Sambeek,Tao Cai,Jessica Dong,Rishabh Kothari,James M. LeBeau,R. Jaramillo
DOI: https://doi.org/10.1002/adfm.202405135
IF: 19
2024-05-30
Advanced Functional Materials
Abstract:The band gap of chalcogenide perovskite thin films can be tuned by post‐growth selenization, akin to the sulfurization and selenization procedures long‐established in thin film photovoltaics manufacturing. The procedure works on epitaxial and non‐epitaxial thin films and can make high‐selenium content BaZr(S,Se)3 films with a band gap ≈1.5 eV. The synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys is demonstrated by selenization of BaZrS3 thin films. The anion‐exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature one‐hundred‐times stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high‐selenium‐content thin films with and without epitaxy. The manufacturing‐compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology.
materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
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