Abstract:Chalcogenide perovskites exhibit optoelectronic properties that position them as potential materials in the field of photovoltaics. We report a detailed investigation into the electronic structure and chemical properties of polycrystalline BaZrS3 perovskite powder by X-ray photoelectron spectroscopy, complemented by an analysis of its long- and short-range geometric structures using X-ray diffraction and X-ray absorption spectroscopy. The results obtained for the powdered BaZrS3 are compared to similar measurements on a sputtered polycrystalline BaZrS3 thin film prepared through rapid thermal processing. While bulk characterization confirms the good quality of the powder, depth-profiling achieved by photoelectron spectroscopy utilizing Al Kα (1.487 keV) and Ga Kα (9.25 keV) radiations shows that, regardless of the fabrication method, the oxidation effects extend beyond 10 nm from the sample surface, with zirconium oxides specifically distributing deeper than the oxidized sulfur species. A hard X-ray photoelectron spectroscopy study on the powder and thin film detects signals with minimal contamination contributions and allows for the determination of the valence band maximum position with respect to the Fermi level. Based on these measurements, we establish a correlation between the experimental valence band spectra and the theoretical density of states derived from density functional theory calculations, thereby discerning the orbital constituents involved. Our analysis provides an improved understanding of the electronic structure of BaZrS3 developed through different synthesis protocols by linking it to material geometry, surface chemistry, and the nature of doping. This methodology can thus be adapted for describing electronic structures of chalcogenide perovskite semiconductors in general, a knowledge that is significant for interface engineering and, consequently, for device integration.

Atomic Structure of Self-Buffered BaZr(S,Se)$_3$ Epitaxial Thin Film Interfaces

Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy

Epitaxial Thin Films of a Chalcogenide Perovskite

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

A Reliable, Colloidal Syntheses Method of the Chalcogenide Perovskite, BaZrS3, and Related ABS3 Nanomaterials (A = Sr, Ba; B = Ti, Zr, Hf): Towards Thin-Film Device Applications

Quasi-epitaxial growth of BaTiS$_3$ films

Electronic Structure and Surface Chemistry of BaZrS3 Perovskite Powder and Sputtered Thin Film

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films.

Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics

Solution-Mediated Inversion of SnSe to Sb2Se3 Thin-Films

Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates

Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches

Atomic Scale Understanding of the Epitaxy of Perovskite Oxides on Flexible Mica Substrate

The role of SiO2 buffer layer in the molecular beam epitaxy growth of CsPbBr3 perovskite on Si(111)

Heterostructured CdS Buffer Layer for Sb2Se3 Thin Film Solar Cell

Electronic structure characterization by photoelectron spectroscopy of BaZrS3 perovskite powder and thin film

Breaking Barriers in Chalcogenide Perovskite Synthesis: A Generalized Framework for Fabrication of BaMS3 (M═Ti, Zr, Hf) Materials

Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures