Abstract:Chalcogenide perovskites exhibit optoelectronic properties that position them as potential materials in the field of photovoltaics. We report a detailed investigation into the electronic structure and chemical properties of polycrystalline BaZrS3 perovskite powder by X-ray photoelectron spectroscopy, complemented by an analysis of its long- and short-range geometric structures using X-ray diffraction and X-ray absorption spectroscopy. The results obtained for the powdered BaZrS3 are compared to similar measurements on a sputtered polycrystalline BaZrS3 thin film prepared through rapid thermal processing. While bulk characterization confirms the good quality of the powder, depth-profiling achieved by photoelectron spectroscopy utilizing Al Kα (1.487 keV) and Ga Kα (9.25 keV) radiations shows that, regardless of the fabrication method, the oxidation effects extend beyond 10 nm from the sample surface, with zirconium oxides specifically distributing deeper than the oxidized sulfur species. A hard X-ray photoelectron spectroscopy study on the powder and thin film detects signals with minimal contamination contributions and allows for the determination of the valence band maximum position with respect to the Fermi level. Based on these measurements, we establish a correlation between the experimental valence band spectra and the theoretical density of states derived from density functional theory calculations, thereby discerning the orbital constituents involved. Our analysis provides an improved understanding of the electronic structure of BaZrS3 developed through different synthesis protocols by linking it to material geometry, surface chemistry, and the nature of doping. This methodology can thus be adapted for describing electronic structures of chalcogenide perovskite semiconductors in general, a knowledge that is significant for interface engineering and, consequently, for device integration.

Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics

Realization of BaZrS 3 Chalcogenide Perovskite Thin Films for Optoelectronics

Epitaxial Thin Films of a Chalcogenide Perovskite

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Electronic Structure and Surface Chemistry of BaZrS3 Perovskite Powder and Sputtered Thin Film

Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches

P-type conductive BaZrS3 thin film and its band gap tunning via Ruddlesden-Popper Ba3Zr2S7 and titanium alloying

Electronic structure characterization by photoelectron spectroscopy of BaZrS3 perovskite powder and thin film

Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates

Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy

Electrical contacts for high performance optoelectronic devices of BaZrS3 single crystals

An Environmentally Stable and Lead-Free Chalcogenide Perovskite

Chalcogenide Perovskite Thin Films with Controlled Phases for Optoelectronics

Charge Transport and Defects in Sulfur-Deficient Chalcogenide Perovskite BaZrS$_3$

Ultrafast Carrier Dynamics and Transient Nonlinear Absorption in Chalcogenide Perovskite BaZrS3

A Reliable, Colloidal Syntheses Method of the Chalcogenide Perovskite, BaZrS3, and Related ABS3 Nanomaterials (A = Sr, Ba; B = Ti, Zr, Hf): Towards Thin-Film Device Applications

Assessing carrier mobility, dopability, and defect tolerance in the chalcogenide perovskite BaZrS$_3$

Chalcogenide Perovskites - an Emerging Class of Ionic Semiconductors

Bright Luminescence of Sb Doping in All-Inorganic Zinc Halide Perovskite Variant

Exploring the potential of powder-to-film processing for proof-of-concept BaZrS 3 perovskite solar cells

Chalcogenide Perovskite BaZrS3 Bulks for Thermoelectric Conversion with Ultra-High Carrier Mobility and Low Thermal Conductivity