Performance limit of monolayer MoSi 2 N 4 transistors

Xiaotian Sun,Zhigang Song,Nannan Huo,Shiqi Liu,Chen Yang,Jie Yang,Weizhou Wang,Jing Lu

DOI: https://doi.org/10.1039/d1tc02937a

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:The ultra-short gate-length ML MoSi 2 N 4 MOSFET can meet the ITRS requirements with low power dissipation.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Performance Limit of Monolayer MoSi2N4 Transistors

Xiaotian Sun,Zhigang Song,Nannan Huo,Shiqi Liu,Chen Yang,Jie Yang,Weizhou Wang,Jing Lu

DOI: https://doi.org/10.1039/d1tc02937a

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:The ultra-short gate-length ML MoSi2N4 MOSFET can meet the ITRS requirements with low power dissipation.
Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Ying Li,Yang Shen,Linqiang Xu,Shiqi Liu,Yang Chen,Qiuhui Li,Zongmeng Yang,Xiaotian Sun,He Tian,Jing Lu

2024-04-22

Abstract:Sub-1-nm gate length $MoS_2$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the sub-1-nm gate length monolayer (ML) $MoS_2$ transistors through ab initio quantum transport simulations. Our simulation results demonstrate that, through appropriate doping and dielectric engineering, the sub-1-nm devices can meet the requirement of extended 'ITRS'(International Technology Roadmap for Semiconductors) $L_g$=0.34 nm. Following device optimization, we achieve impressive maximum on-state current densities of 409 $\mu A / \mu m$ for n-type and 800 $\mu A / \mu m$ for p-type high-performance (HP) devices, while n-type and p-type low-power (LP) devices exhibit maximum on-state current densities of 75 $\mu A / \mu m$ and 187 $\mu A / \mu m$, respectively. We employed the Wentzel-Kramer-Brillouin (WKB) approximation to explain the physical mechanisms of underlap and spacer region optimization on transistor performance. The underlap and spacer regions primarily influence the transport properties of sub-1-nm transistors by respectively altering the width and body factor of the potential barriers. Compared to ML $MoS_2$ transistors with a 1 nm gate length, our sub-1-nm gate length HP and LP ML $MoS_2$ transistors exhibit lower energy-delay products. Hence the sub-1-nm gate length transistors have immense potential for driving the next generation of electronics.

Computational Physics
Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Yang Liu,Xufeng Wang,Mathieu Luisier,Mark Lundstrom

DOI: https://doi.org/10.1109/isdrs.2009.5378204

2009-01-01

Abstract:In this paper, numerical simulations were used to study the device physics in the In x Ga 1-x As MOSFETs with a gate length of 15 nm (initial) and 10 nm after optimizing the device structure. Key device metrics were identified at the ballistic limit using a 2-D Schrodinger-Poisson solver with effective masses imported from accurate tight-binding calculations. It was concluded that the simulation of a prototype for III-V quantum well MOSFETs with a gate length of 15 nm predicts decent performances if Si-matched series resistance can be obtained. The device has very high injection velocities, but suffers from significant S/D leakage under offstate. As a next step, the possibility of designing high-performance III-V MOSFETs at a gate length of 10 nm will be investigated.
Sub-5 Nm Gate Length Monolayer MoTe2 Transistors

Qiang Li,Jie Yang,Qiuhui Li,Shiqi Liu,Linqiang Xu,Chen Yang,Lin Xu,Ying Li,Xiaotian Sun,Jinbo Yang,Jing Lu

DOI: https://doi.org/10.1021/acs.jpcc.1c01754

2021-01-01

Abstract:Since silicon-based field-effect transistors (FETs) are approaching their scaling limit, two-dimensional (2D) semiconductors have been proposed as alternative channel materials. Recently, air-stable 2D trilayer (TL) MoTe2 FETs with a 4 nm gate length have been fabricated experimentally. To explore the device performance limit of the monolayer MoTe2 FETs, we simulate the sub-5 nm gate length double-gate (DG) ML MoTe2 FETs by using the ab initio quantum transport method. We find that when taking negative capacitance technology and underlap into account, the performances of the 3 nm gate length p-type DG ML MoTe2 FETs can satisfy the International Technology Roadmap for Semiconductor 2013 requirements for both the high-performance and low-power applications in the 2028 horizon. Thus, ML MoTe2 as channel materials can scale Moore's law down to 3 nm.
Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

Zeyuan Ni,Meng Ye,Jianhua Ma,Yangyang Wang,Ruge Quhe,Jiaxin Zheng,Lun Dai,Dapeng Yu,Junjie Shi,Jinbo Yang,Satoshi Watanabe,Jing Lu

DOI: https://doi.org/10.1002/aelm.201600191

IF: 6.2

2016-01-01

Advanced Electronic Materials

Abstract:Field-effect transistors (FETs) fabricated with monolayer (ML) molybdenum disulfide (MoS2) have shown promising potential as a candidate of next-generation nanoelectronic devices. The first first-principles quantum transport investigation of the ballistic performance upper limit of sub-10 nm ML MoS2 FETs with Ti electrode is provided. An extraordinary small subthreshold swing is obtained by taking advantage of a dual gate (DG) configuration. The ballistic performance upper limits of the sub-10 nm ML MoS2 DGFETs are comparable with the best existing sub-10 nm advanced silicon FETs. The 10 nm ML MoS2 DGFET can satisfy 35% and 54% requirement of the on-state current of high performance and low power FETs of the next decade in the International Technology Roadmap for Semiconductors 2013, respectively.
Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Han Zhang,Bowen Shi,Lin Xu,Junfeng Yan,Wu Zhao,Zhiyong Zhang,Jing Lu

DOI: https://doi.org/10.1021/acsaelm.0c00840

IF: 4.494

2021-01-01

ACS Applied Electronic Materials

Abstract:Inspired by the recent achievements of the two-dimensional (2D) sub-5 nm MoS2 field effect transistors (FETs), we use the ab initio quantum-transport methods to simulate the transport properties of the sub-5 nm gate-length monolayer (ML) MoS2 MOSFETs. We find that the ML MoS2 double-gated MOSFETs (DGFETs) with the 1, 3, and 5 nm gate length fail to meet the on-state current requirements in the International Technology Roadmap for Semiconductors (ITRS) for high-performance (HP) devices. However, both the ML MoS2 n- and p-DGFETs with 5 nm gate length can address the requirements in the ITRS for low-power (LP) applications in terms of on-state current, effective delay time, and power-delay products (PDPs). After the introduction of the negative capacitance dielectric layer, the ML MoS2 p-DGFETs can satisfy the LP application requirements of ITRS until the gate length scales down to 3 nm. Hence, ML MoS2 remains a potential channel candidate for LP applications in the sub-5 nm scale.
Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Jun-Sheng Huang,Ping Li,Xiao-Xiong Ren,Zhi-Xin Guo

DOI: https://doi.org/10.48550/arXiv.2105.12512

2021-05-26

Mesoscale and Nanoscale Physics

Abstract:Two-dimensional (2D) semiconductors have attracted tremendous interests as natural passivation and atomically thin channels that could facilitate continued transistor scaling. However, air-stable 2D semiconductors with high performance were quite elusive. Recently, extremely air-stable MoSi2N4 monolayer had been successfully fabricated [Hong et al., Science 369, 670 (2020)]. To further reveal its potential applications in the sub-5 nm MOSFETs, there is an urgent need to develop integrated circuits. Here we report first-principles quantum transport simulations on the performance limits of n- and p-type sub-5 nm monolayer (ML) MoSi2N4 metal-oxide-semiconductor FETs (MOSFETs). We find that the on-state current in the MoSi2N4 MOSFETs can be effectively manipulated by the length of gate and underlap (UL), as well as the doping concentration. Very strikingly, we also find that the n-type devices the optimized on-state current can reach up to 1390 and 1025 uA/um for the high performance (HP) and low power (LP) applications, respectively, both of which satisfy the International Technology Roadmap for Semiconductors (ITRS) requirements. Whereas, the optimized on-state current can meet the LP application (348 uA/um) for the p-type devices. Finally, we find that the MoSi2N4 MOSFETs have ultra-low subthreshold swing and power delay product, which have potential to realize the high speed and low power consumption devices. Our results show that MoSi2N4 is an ideal 2D channel material for future competitive ultrascaled devices.
Sub-5 nm Monolayer MoS 2 Transistors toward Low-Power Devices

Han Zhang,Bowen Shi,Lin Xu,Junfeng Yan,Wu Zhao,Zhiyong Zhang,Zhiyong Zhang,Jing Lu

DOI: https://doi.org/10.1021/acsaelm.0c00840

IF: 4.494

2021-03-15

ACS Applied Electronic Materials

Abstract:Inspired by the recent achievements of the two-dimensional (2D) sub-5 nm MoS2 field effect transistors (FETs), we use the ab initio quantum-transport methods to simulate the transport properties of the sub-5 nm gate-length monolayer (ML) MoS2 MOSFETs. We find that the ML MoS2 double-gated MOSFETs (DGFETs) with the 1, 3, and 5 nm gate length fail to meet the on-state current requirements in the International Technology Roadmap for Semiconductors (ITRS) for high-performance (HP) devices. However, both the ML MoS2n- and p-DGFETs with 5 nm gate length can address the requirements in the ITRS for low-power (LP) applications in terms of on-state current, effective delay time, and power-delay products (PDPs). After the introduction of the negative capacitance dielectric layer, the ML MoS2p-DGFETs can satisfy the LP application requirements of ITRS until the gate length scales down to 3 nm. Hence, ML MoS2 remains a potential channel candidate for LP applications in the sub-5 nm scale.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00840?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00840</a>.On-state current, SS, delay time and power-delay products as a function of the UL length in the n- and p-type MoS2 DGFETs, and transfer characteristics of the DG n- and p-type UL-free ML MoS2 DGFET with and without the negative dielectric layer (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00840/suppl_file/el0c00840_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices

Ying Li,Chunyu Qi,Xun Zhou,Linqiang Xu,Qiuhui Li,Shiming Liu,Chen Yang,Shiqi Liu,Lin Xu,Jichao Dong,Shibo Fang,Zongmong Yang,Yifan Chen,Xiaotian Sun,Jing Lu

DOI: https://doi.org/10.1103/PhysRevApplied.20.064044

IF: 4.6

2023-01-01

Physical Review Applied

Abstract:Complementary metal oxide semiconductor (CMOS) devices require both n-type and p-type metaloxide-semiconductor field-effect transistors (MOSFETs), but achieving both types that meet the requirements of the International Technology Roadmap for Semiconductors (ITRS) at ultrashort gate lengths is a challenge. Recently synthesized two-dimensional crystal WSi2N4 exhibits high theoretical hole and electron carrier mobilities. In this study, we investigate the performance limits of double-gated (DG) monolayer (ML) WSi2N4 MOSFETs with sub-5-nm gate lengths using first-principles density-functional theory and the nonequilibrium Green's function method. Our results show that both the n-type and ptype DG ML WSi2N4 MOSFETs can meet the requirements of ITRS 2013 for high-performance (HP) applications at the 2028 technology node, even when the gate length is scaled to 3 nm. For low-power applications, the scaling limits for the gate lengths of the n-type and p-type DG ML WSi2N4 MOSFETs are 4 and 5 nm, respectively. Importantly, the ON-state currents of the n-type and p-type HP DG ML WSi2N4 MOSFETs are highly symmetric, highlighting the potential of ML WSi2N4 as a promising material for building next-generation CMOS devices, especially for HP applications.
Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Xiaotian Sun,Lin Xu,Yu Zhang,Weizhou Wang,Shiqi Liu,Chen Yang,Zhiyong Zhang,Jing Lu

DOI: https://doi.org/10.1021/acsami.0c01750

2020-05-06

Abstract:With the scaling limits of silicon-based MOS technology, the critical and challenging issue is to explore more and more alternative materials to improve the performance of devices. Two-dimensional (2D) semiconductor WSe2 with a proper band gap and inherent stability under ambient conditions makes it a potential channel material for realizing new generation field-effect transistors (FETs). In light of the low on-state current of the experimental sub-10 nm 2D MoS2 FETs, we explore the limitation of the monolayer (ML) WSe2 device performance by using accurate ab initio quantum transport simulation. We find that the sub-10 nm 2D WSe2 FETs apparently outperform their MoS2 counterpart. The on-state current of the optimized p-type ML WSe2 FETs can satisfy the criteria of the International Technology Roadmap for Semiconductors (ITRS) on both the high-performance (HP) and low-power (LP) devices until the gate length is scaled down to 2 and 3 nm, respectively. By the aid of the negative capacitance effect, even the 1 nm gate-length WSe2 MOSFETs can satisfy both the HP and LP requirements in the ITRS 2028 completely. Remarkably, the ML WSe2 MOSFET has the highest theoretical on-current in LP application among the examined 2D MOSFETs at the 5 nm gate length to the best of our knowledge.
Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

Yuanyuan Pan,Jingrou Dai,Lin Xu,Jie Yang,Xiuying Zhang,Jiahuan Yan,Jingzhen Li,Bowen Shi,Shiqi Liu,Han Hu,Mingbo Wu,Jing Lu

DOI: https://doi.org/10.1103/physrevapplied.14.024016

IF: 4.6

2020-08-07

Physical Review Applied

Abstract:As one of the thinnest forms of semiconducting silicon, monolayer (ML) silicane has not only excellent gate electrostatics and carrier transport ability, but also compatibility with well-established silicon-based technology. We explore the device performance limits of sub-5-nm ML silicane metal-oxide-semiconductor field-effect transistors (MOSFETs) by applying ab initio quantum transport simulations. The on-state current, effective delay time, and power-delay product of the optimized n-type and p-type ML silicane MOSFETs can well or nearly meet the high-performance device requirements of the International Technology Roadmap for Semiconductors (ITRS) at a gate length of 5 nm. Those of the optimized n-type ML silicane MOSFETs at a gate length of 3 nm and the p-type ML silicane MOSFETs at a gate length of 5 nm can meet the low-power-device demands of the ITRS. Thus, ML silicane as channel materials can scale the Moore’s law down to 5 nm.

physics, applied
Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Xiaotian Sun,Lin Xu,Yu Zhang,Weizhou Wang,Shiqi Liu,Chen Yang,Zhiyong Zhang,Jing Lu

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:With the scaling limits of silicon-based MOS technology, the critical and challenging issue is to explore more and more alternative materials to improve the performance of devices. Two-dimensional (2D) semiconductor WSe₂ with a proper band gap and inherent stability under ambient conditions makes it a potential channel material for realizing new generation field-effect transistors (FETs). In light of the low on-state current of the experimental sub-10 nm 2D MoS₂ FETs, we explore the limitation of the monolayer (ML) WSe₂ device performance by using accurate ab initio quantum transport simulation. We find that the sub-10 nm 2D WSe₂ FETs apparently outperform their MoS₂ counterpart. The on-state current of the optimized p-type ML WSe₂ FETs can satisfy the criteria of the International Technology Roadmap for Semiconductors (ITRS) on both the high-performance (HP) and low-power (LP) devices until the gate length is scaled down to 2 and 3 nm, respectively. By the aid of the negative capacitance effect, even the 1 nm gate-length WSe₂ MOSFETs can satisfy both the HP and LP requirements in the ITRS 2028 completely. Remarkably, the ML WSe₂ MOSFET has the highest theoretical on-current in LP application among the examined 2D MOSFETs at the 5 nm gate length to the best of our knowledge.
First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Yueyang Ma,Linpeng Dong,Penghui Li,Lanting Hu,Bin Lu,Yuanhao Miao,Bo Peng,Ailing Tian,Weiguo Liu

DOI: https://doi.org/10.1021/acsami.2c12266

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:The electronic properties of monolayer (ML) Ga2O3 and transport properties of ML Ga2O3-based n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated by first-principles calculations under the framework of density functional theory (DFT) coupled with the nonequilibrium Green's function (NEGF) formalism. The results show that ML Ga2O3 has a quasi-direct band gap of 4.92 eV, and the x- and y-directed electron mobilities are 1210 and 816 cm2 V-1 s-1 at 300 K, respectively, under the full consideration of phonon scattering. The electron-phonon scattering mechanism shows a temperature-dependent behavior, with the acoustic modes dominating below 300 K and optical modes dominating above 300 K. At a gate length of Lg = 5 nm, the on-current of ML Ga2O3 n-MOSFET for high-performance (HP) application is 2890 μA/μm, which is more than those of the most reported two-dimensional (2D) materials. The delay time as well as the power delay product of ML Ga2O3 MOSFETs can meet the demands of the latest International Technology Roadmap for Semiconductors (ITRS) for HP and low-power (LP) applications until Lg is less than 4 and 5 nm, respectively. Through underlap structure and doping optimization strategies, ML Ga2O3 n-MOSFET can further fulfill the ITRS requirements for 1 nm. At last, we compare the performance of the 32-bit arithmetic logic unit (ALU) built on ML Ga2O3 MOSFETs with the recently reported beyond-CMOS devices. Our results indicate that ML Ga2O3 can serve as a promising channel material in the post-silicon era.
Comprehensive Understanding of Electron Mobility and Superior Performance in Sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFET

Yuehua Xu,Daqing Li,He Sun,Haowen Xu,Pengfei Li

DOI: https://doi.org/10.1039/d3cp05327j

IF: 3.3

2024-01-06

Physical Chemistry Chemical Physics

Abstract:In this study, we have investigated the electron mobility of monolayer (ML) tetrahex-GeC 2 by solving the linearized Boltzmann transport equation (BTE) with the normalized full-band relaxation time approximation (RTA) using density functional theory (DFT). Contrary to what the deformation potential theory (DPT) suggested, the ZA acoustic mode was determined to be the most restrictive for electron mobility, not the LA mode. The electron mobility at 300 K is 803 cm2/(Vs), exceeding the 400 cm2/(Vs) of MoS2 which was calculated using the same method and measured experimentally. The Ab initio quantum transport simulations were performed to assess the performance limits of sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs, including gate lengths (L g ) of 3 nm, 5 nm, 7 nm, and 9 nm, with the underlap (UL) effect considered for the first two. For both high-performance (HP) and low-power (LP) applications, their on-state currents (I on ) can meet the requirements of similar nodes in the ITRS 2013. Specifically, the I on is more remarkable for HP applications than that of the extensively studied MoS 2 . For LP applications, the I on at L g of 7 and 9 nm surpasses that of Arsenene, known for being the largest Ion among 2D semiconductors. Subthreshold swings (SS) as low as 69/53 mV/dec at L g of 9 nm were observed for HP/LP applications, and 73 mV/dec at L g of 5 nm for LP applications, indicating excellent gate control capability. Moreover, the delay time τ and power dissipation (PDP) at Lg of 3 nm, 5 nm, 7 nm, and 9 nm are all below the upper limits of the ITRS 2013 HP/LP proximity nodes and are comparable to or lower than those of typical 2D semiconductors. The sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs can be down-scaled to 9 nm and 5 nm for HP and LP applications, respectively, displaying desirable Ion, delay time τ, and PDP in the ballistic limit, making them a potential choice for sub-10 nm transistors.

chemistry, physical,physics, atomic, molecular & chemical
Scaling limits of monolayer AlN and GaN MOSFETs

Hong Li,Yuhang Liu,Shuai Sun,Fengbin Liu,Jing Lu

DOI: https://doi.org/10.1016/j.apsusc.2023.157613

IF: 6.7

2023-06-08

Applied Surface Science

Abstract:The shrinking of transistors to ultra-scale limits is in great demand to extend Moore's law, where the search for proper alternative channel materials is significant. The III-V group compounds are regarded as post-Si candidates for their high electron mobility. Herein, we simulate the monolayer (ML) AlN and GaN metal–oxidesemiconductor field-effect transistors (MOSFETs) with ab initio quantum transport simulation to evaluate their scale limit. The ML AlN and GaN MOSFETs exhibit much better n -type performances than their p -type counterparts, and the n -type ML AlN (GaN) MOSFETs can surpass the International Roadmap for Device and Systems (IRDS, 2022 version) lower-power (LP) and high-performance (HP) target for the year 2028 even at gate length ( L g ) of 3 and 2 nm, respectively. Encouragingly, the optimal n -type ML AlN (GaN) MOSFETs possess the highest (second-highest) I on against all studied n -type ML MOSFETs and propel the L g limit that outperforms the International Technology Roadmap for Semiconductors (ITRS, 2013 version) LP and HP targets to 2 and 1 (2) nm, respectively.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Device performance and strain effect of sub-5 nm monolayer InP transistors

Linqiang Xu,Ruge Quhe,Qiuhui Li,Shiqi Liu,Jie Yang,Chen Yang,Bowen Shi,Hao Tang,Ying Li,Xiaotian Sun,JinBo Yang,Jing Lu

DOI: https://doi.org/10.1039/d1tc03814a

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:The performance limit of the sub-5 nm monolayer (ML) indium phosphide (InP) FETs is explored. I on , τ , and PDP of the ML InP FETs could meet the ITRS demands for the high-performance/low-power devices until gate length is reduced to 2/4 nm.

materials science, multidisciplinary,physics, applied
Sub-5 Nm Monolayer Arsenene and Antimonene Transistors

Xiaotian Sun,Zhigang Song,Shiqi Liu,Yangyang Wang,Youyong Li,Weizhou Wang,Jing Lu

DOI: https://doi.org/10.1021/acsami.8b03840

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Novel two-dimensional (2D) semiconductors arsenene and antimonene are promising channel materials for next-generation field effect transistors (FETs) because of the high carrier mobility and stability under ambient conditions. Stimulated by the recent experimental development of sub-5 nm 2D MoS2 FETs, we investigate the device performance of monolayer (ML) arsenene and antimonene in the sub-5 nm region by using accurate ab initio quantum transport simulation. We reveal that the optimized sub-5 nm double-gate (DG) ML arsenene and antimonene metal-oxide-semiconductor FETs (MOSFETs) can fulfill the low power requirements of the International Technology Roadmap for Semiconductors in 2028 until the gate length is scaled down to 4 nm. When the gate length is scaled down to 1 nm, the performances of the DG ML arsenene and antimonene MOSFETs are superior to that of the DG ML MoS2 MOSFETs in terms of the on-current. Therefore, 2D arsenene and antimonene are probably more suitable for ultrascaled FETs than 2D MoS2 in the post-silicon era.
Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Xiaoyang Xiao,Mo Chen,Jin Zhang,Tianfu Zhang,Lihui Zhang,Yuanhao Jin,Jiaping Wang,Kaili Jiang,Shoushan Fan,Qunqing Li

DOI: https://doi.org/10.1021/acsami.8b21437

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Transition-metal dichalcogenides are promising challengers to conventional semiconductors owing to their remarkable electrical performance and suppression of short-channel effects (SCEs). In particular, monolayer molybdenum disulfide has exhibited superior suppression of SCEs owing to its atomic thickness, high effective carrier mass, and low dielectric constant. However, difficulties still remain in large-scale stable fabrication of nanometer-scale channels. Herein, a method to fabricate electrodes with sub-10 nm gaps was demonstrated using horizontally aligned single-walled carbon nanotubes as an evaporation mask. The widths of the nanogaps exhibit robust stability to various process parameters according to the statistical results. Based on these nanogaps, ultrashort-channel length monolayer MoS2 field-effect transistors were produced. Monolayer MoS2 devices with a 7.5 nm channel length and a 10 nm thick HfO2 dielectric layer exhibited excellent performances with an ON/OFF ratio up to 107, a mobility of 17.4 cm2/V·s, a subthreshold swing of about 120 mV/dec, and a drain-induced barrier lowering of about 140 mV/V, all of which suggest a superior suppression of SCEs. This work provides a universal and stable method for large-scale fabrication of ultrashort-channel 2D-material transistors.
Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

Jiahuan Yan,Hua Pang,Lin Xu,Jie Yang,Ruge Quhe,Xiuying Zhang,Yuanyuan Pan,Bowen Shi,Shiqi Liu,Lianqiang Xu,Jinbo Yang,Feng Pan,Zhiyong Zhang,Jing Lu

DOI: https://doi.org/10.1002/aelm.201900226

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:The merging 2D semiconductor tellurene (2D Group-VI tellurium) is a possible channel candidate for post-silicon field-effect transistor (FETs) due to its high carrier mobility, high drive current, and excellent air stability. The performance limits of sub-5-nm ML tellurene metal-oxide-semiconductor FETs (MOSFETs) are explored by employing exact ab initio quantum transport simulations. An optimized p-type ML tellurene MOSFET meets both the high performance (along both the armchair and the zigzag directions) and the low power (along the armchair direction) requirements of the International Technology Roadmap for Semiconductors (ITRS) at a gate length of 4 nm with a negative capacity dielectric. Hence, choosing ML tellurene as the channel material provides a novel route to continue the Moore's law to 4 nm.
Performance Limit of All-Wrapped Monolayer MoS2 Transistors.

Wenbo Zhang,Binxi Liang,Jiachen Tang,Jian Chen,Qing Wan,Yi Shi,Songlin Li

DOI: https://doi.org/10.1016/j.scib.2023.08.014

IF: 18.9

2023-01-01

Science Bulletin

Abstract:All-wrapped transistors consisting of two-dimensional transition-metal dichalcogenide channels are appealing candidates for post-silicon electronics. Based on the Boltzmann transport theory, here we report a comprehensive theoretical survey on the performance limits for monolayer MoS2 transistors with three prototypical gate dielectrics (Al2O3, HfO2 and BN), by including primary extrinsic charge scattering mechanisms present in practical devices. A concept of "dead space" between the dielectrics and channels is proposed and used in calculation to ameliorate the general overestimation in scattering intensity of surface optical phonons, which enables an accurate description of electronic transport behavior. Crucial device indices, including charge mobility and current density, are thoroughly analyzed for transistors at post-silicon technological nodes beyond 1 nm. The on-state current is estimated to be generally greater than 2 mA lm-1 at channel lengths below 10 nm. The results clarify the potential benefits in performance from extremely miniaturized monolayer-channel transistors for More-Moore electronics.(c) 2023 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.

Performance limit of monolayer MoSi 2 N 4 transistors

Performance Limit of Monolayer MoSi2N4 Transistors

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Simulation Study of Device Physics Issues in III&amp;#x2013;V MOSFETs at 10 Nm Node

Sub-5 Nm Gate Length Monolayer MoTe2 Transistors

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Sub-5 nm Monolayer MoS 2 Transistors toward Low-Power Devices

Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Comprehensive Understanding of Electron Mobility and Superior Performance in Sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFET

Scaling limits of monolayer AlN and GaN MOSFETs

Device performance and strain effect of sub-5 nm monolayer InP transistors

Sub-5 Nm Monolayer Arsenene and Antimonene Transistors

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

Performance Limit of All-Wrapped Monolayer MoS2 Transistors.

Simulation Study of Device Physics Issues in III–V MOSFETs at 10 Nm Node