Abstract:X-Ray or 254 nm UV-light charged storage phosphors have various promising applications such as in anti-counterfeiting and information storage. However, developing such storage phosphors with high charge carrier storage capacity remains challenging. In this work, photoluminescence spectroscopy, thermoluminescence (TL), and vacuum-referred binding energy (VRBE) diagram were combined to study the trapping and liberation processes of charge carriers in Bi 3+ and/or Ln 3+ (Ln = Tb, Pr, or Dy) doped LiLuGeO 4 . Unintended defects act as good electron trapping centers, while Bi 3+ , Tb 3+ , and Pr 3+ act as hole-capturing and recombination centers. Dy 3+ does not act as an electron trapping center but as a luminescence center by energy transfer from Bi 3+ → Dy 3+ . The ratios of the integrated TL intensities between 303 K and 650 K for LiLuGeO 4 :0.005Bi 3+ , LiLuGeO 4 :0.005Bi 3+ ,0.005Tb 3+ , or LiLuGeO 4 :0.005Bi 3+ ,0.005Dy 3+ after X-ray charging to that of the state-of-the-art BaFBr(I):Eu 2+ is about 1.24, 0.59, and 0.90, respectively. More than 10 h or 40 h afterglow was measurable in both LiLuGeO 4 :0.005Bi 3+ and LiLuGeO 4 :0.005Bi 3+ ,0.005Tb 3+ after X-ray or 254 nm UV-light charging. The stored charge carriers stored can be efficiently excited to produce optically stimulated luminescence with a wide range 365 nm UV-light to 850 nm infrared laser beam. Proof-of-concept colour-tailorable afterglow, X-ray irradiation time or sample mass-dependent dosimetry, and optically-stimulated luminescence with a wide range of 365 nm UV-light to 850 nm infrared laser stimulation will be demonstrated for anti-counterfeiting, information storage, and display applications in the developed Bi 3+ and/or Ln 3+ -doped LiLuGeO 4 . This work not only reports Bi 3+ and/or Ln 3+ doped LiLuGeO 4 storage phosphors with excellent charge carrier storage capacity but also deepens our understanding of the afterglow and storage phosphors and luminescence mechanisms, which can guide us to explore new afterglow and storage phosphors for multimode applications.

Light-induced charge transport processes in photorefractive crystals II: Materials

Light-induced charge-transport in undoped LiNbO3 crystals

Barium Titanate Nanostructures and Thin Films for Photonics

Light-Induced Infrared Absorption Spectra and Properties of Impurity Levels in Doped Photorefractive Batio3

Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces

Anomalous Photorefractive Behaviors in Doped Knsbn Crystals

Light-induced giant enhancement of nonreciprocal transport at KTaO 3 -based interfaces

Two-photon Absorption and Nonlinear Optical Properties in Undoped and Doped Ferroelectric Thin Films

Charge carrier trapping management in Bi3+ and lanthanides doped Li(Sc,Lu)GeO4 for x-ray imaging, anti-counterfeiting, and force recording

The Study On Photorefractive Properties Of Several Crystals

Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

Ultrafast dynamics of Dirac surface and bulk photocarriers in topological-insulator bismuth telluride nanocrystals using terahertz spectroscopy

Research on Sensitization and Bleaching of Typical Doubly Doped Lithium Niobate Crystals

Light-Induced Absorption in Photorefractive Barium Titanate Doped with Rhodium

Fabrication of Periodic and Quasi-Periodic Superlattices for Nonlinear Optical Applications

Light-induced Charge Density Wave in LaTe3

High charge carrier storage capacity and wide range X-rays to infrared photon sensing in LiLuGeO4:Bi3+,Ln3+ (Ln = Pr, Tb, or Dy) for anti-counterfeiting and information storage applications

SNOM study of periodically poled ferroelectric domains in LiNbO 3 , LiTaO 3 and Ba 2 NaNb 5 O 15 crystals

Light–Heat and Light–Light Dual-Controlled Upconversion Luminescence and Photochromic Processes in Er-Activated Bi7Ti4NbO21 for Optical Information Storage

Imaging carrier transport properties in halide perovskites using time-resolved optical microscopy

Photoexcited charge-carrier transport in monolayer and bulk bismuth oxyiodide:the impact of the polaronic effect and deep-level defects