On Reliability of SiC Power Devices in Power Electronics

Diane-Perle Sadik

Abstract:Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher ...

Engineering,Physics,Materials Science

What problem does this paper attempt to address?

Comparative Study on Reliability and Application Features of SiC MOSFET

Yiding Wu,Miaoguang Bai,Qing Guo,Junliang Xu,Hai Lin

DOI: https://doi.org/10.1109/peas58692.2023.10395628

2023-01-01

Abstract:With the development of new energy industry, there is a trend to increase bus voltage. The existing 1700V device cannot meet the application of 1500V bus voltage well. The new 2000V device is a potential better choice. The avalanche and short-circuit characteristics of 2000V silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) were tested and compared with those of 1700V SiC MOSFET. This paper also compared the effects of 1200V devices and 2000V devices used in practical circuits. A boost circuit based on 2000V SiC MOSFET and a dual-boost circuit based on 1200V SiC MOSFET were built, and their circuit waveform, efficiency and temperature were compared. The comparative study on reliability and application features of SiC MOSFET has reference significance for the development of SiC MOSFETs that meet application requirements.
Soft-switching SiC Power Electronic Conversion for Distributed Energy Resources and Storage Applications

Keyan SHI,Jinyi DENG,An ZHAO,Dehong XU

DOI: https://doi.org/10.1007/s40565-019-0560-3

IF: 4.469

2019-01-01

Journal of Modern Power Systems and Clean Energy

Abstract:Power electronic conversion plays an important role in flexible AC or DC transmission and distribution systems, integration of renewable energy resources, and energy storage systems to enhance efficiency, controllability, stability, and reliability of the grid. The efficiency and reliability of power electronic conversion are critical to power system applications. One way to enhance the efficiency and reliability of power electronic conversion is soft-switching technology. This paper introduces a generic zero-voltage-switching (ZVS) technique based on silicon carbide (SiC) power device. Using the proposed ZVS technique, all semiconductor switching devices in a power converter can realize ZVS operations. Next, the applications of the ZVS technique in different power electronic conversion systems such as photovoltaic inverters, wind power systems, energy storage systems and flexible AC transmission system devices are discussed. Finally, as an example, the operation performance and efficiency improvement of a SiC metal-oxide-semiconductor field-effect transistor (MOSFET) ZVS back-to-back converter are discussed.
Reliability and performance limitations in SiC power devices

Ranbir Singh

DOI: https://doi.org/10.1016/j.microrel.2005.10.013

IF: 1.6

2006-05-01

Microelectronics Reliability

Abstract:Despite silicon carbide’s (SiC’s) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes and thyristors, and Schottky contact-based devices operating at high temperatures. The performance and reliability issues unique to SiC discussed here include: (a) MOS channel conductance/gate dielectric reliability trade-off due to lower channel mobility as well as SiC–SiO2 barrier lowering due to interface traps; (b) reduction in breakdown field and increased leakage current due to material defects; and (c) increased leakage current in SiC Schottky devices at high temperatures.Although a natural oxide is considered a significant advantage for realizing power MOSFETs and IGBTs in SiC, devices to date have suffered from poor inversion channel mobility. Furthermore, the high interface state density presently found in the SiC–SiO2 system causes the barrier height between SiC and SiO2 to be reduced, resulting in increased carrier injection in the oxide. A survey of alternative dielectrics shows that most suffer from an even smaller conduction band offset at the SiC–dielectric interface than the corresponding Silicon–dielectric interface and have a lower breakdown field strength than SiO2. Thus, an attractive solution to reduce tunneling such as stacked dielectrics is required.In Schottky-based power devices, the reverse leakage currents are dominated by the Schottky barrier height, which is in the 0.7–1.2eV range. Because the Schottky leakage current increases with temperature, the SiC Schottky devices have a reduction in performance at high temperature similar to that of Silcon PN junction-based devices, and they do not have the high temperature performance benefit associated with the wider bandgap of SiC.Defects in contemporary SiC wafers and epitaxial layers have also been shown to reduce critical breakdown electric field, result in higher leakage currents, and degrade the on-state performance of devices. These defects include micropipes, dislocations, grain boundaries and epitaxial defects. Optical observation of PN diodes undergoing on-state degradation shows a simultaneous formation of mobile and propagating crystal stacking faults. These faults nucleate at grain boundaries and permeate throughout the active area of the device, thus degrading device performance after extended operation.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Hao Wu,Chunyan Jiang,Qing Guo,Na Ren,Zhengyun Zhu,Bin Wu,Xiang Qi

DOI: https://doi.org/10.1109/phm-jinan48558.2020.00093

2020-01-01

Abstract:SiC MOSFET Body diodes are expected to compete against SiC schottky barrier diodes (SBD) in high power applications. To investigate the surge capability of the body diodes in commercial SiC MOSFETs, single pulse and repetitive surge current tests are processed on the DUTs. In single pulse surge current test, the DUTs are stressed to failure. Compared with the body diodes in SiC trench-gate MOSFETs, the body diodes in SiC planar-gate MOSFETs tend to show better surge capability at all rated current levels. On the other hand, in repetitive surge current test, the degradation of electrical parameters is observed after hundreds of pulse cycles. The degradation mechanism of bipolar degradation and oxide layer degradation has been analyzed.
Influence of SiC Power Electronic Devices on the Power System

Yu Jingrong,Cao Yijia,Wang Yijun,Han Hua,Xie Huijuan,Wu Weibiao

DOI: https://doi.org/10.3969/j.issn.1671-4776.2012.08.003

2012-01-01

Abstract:The wide-bandgap SiC is known as an ideal material for the excellent power electronic device.The distinctions of the power electronic devices based on Si and SiC materials are compared in the breakdown electric field strength,stability and switching speed.The influence of the SiC power electronic device as the power switch on the flexible AC transmission systems(FACTS),high-voltage direct current(HVDC) technology,renewable energy technologies and micro grid technology are analyzed.The analysis shows that the SiC power electronic devices are characterized in high voltage resistance,high temperature resistance,high switching frequency,low loss and excellent dynamic performance,and have good application prospects in the higher voltage levels(higher than 3 kV) or the higher requirements for the performances of power electronic devices.
SiC based Technology for High Power Electronics and Packaging Applications

Ashutosh Sharma,Soon Jae Lee,Young Joo Jang,Jae Pil Jung

DOI: https://doi.org/10.6117/kmeps.2014.21.2.071

2014-06-30

Journal of the Microelectronics and Packaging Society

Abstract:Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.
Reliability and Standardization for SiC Power Devices

Donald A. Gajewski,Satyaki Ganguly,Daniel J. Lichtenwalner,Edward Van Brunt,Brett Hull,Scott Allen,John W. Palmour

DOI: https://doi.org/10.4028/p-f40b15

2023-06-07

Materials Science Forum

Abstract:Publication date: 6 June 2023 Source: Materials Science Forum Vol. 1092 Author(s): Donald A. Gajewski, Satyaki Ganguly, Daniel J. Lichtenwalner, Edward Van Brunt, Brett Hull, Scott Allen, John W. Palmour The demand is rapidly increasing for SiC MOSFETs and diodes for power electronic conversion semiconductor (PECS) applications such as electrified vehicle charging and traction, energy storage systems and industrial power supplies. These applications employ a high quantity of large-area die per system while demanding high system-level reliability under aggressive electrical and environmental operating conditions. In addition, SiC devices exhibit some failure mechanisms that are less severe than, or non-existent, in Si devices. This situation demands thorough and novel device reliability characterization and quantification. It is also driving the development of industry consortia standards and guidelines at a much faster rate, and relatively earlier in the technology maturation phase, than occurred in the Si industry. In this paper, I will review some of the key published reliability performance data, stress procedure methodologies used, and implications for key applications. I will also compare and contrast the existing guideline and standard documents and suggest directions that are being explored for future documents. I will also discuss how future guidelines and standards are being developed to cover the SiC-specific failure mechanisms for representative mission profiles for some key applications, particularly electrified vehicles.
Advances in SiC materials and devices: an industrial point of view

R.R Siergiej,R.C Clarke,S Sriram,A.K Agarwal,R.J Bojko,A.W Morse,V Balakrishna,M.F MacMillan,A.A Burk,C.D Brandt,A.A Burk, Jr

DOI: https://doi.org/10.1016/s0921-5107(98)00438-3

1999-07-01

Abstract:Silicon Carbide (SiC) is an emerging semiconductor that has proven itself especially well-suited to high temperature power switching and high-frequency power generation. In this paper we examine recent advances in materials development and device performance. In boule growth we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed (1) semi-insulating for MESFETs, and (2) highly conducting boules for SITs and power switches. Very uniform planetary multi-wafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3–5 μm h−1 exhibiting unintentional n-type doping of ∼1×1015 cm−3, and room temperature Hall mobilities of ∼1000 cm2 V−1 s−1. Controlled n-type doping between ∼5×1015 cm−3 and >1×1019 cm−3 has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS Turn-Off Thyristors (MTO™) are being investigated as power switches because they offer ease of turn-off, 500°C operation and reduced cooling requirements. In the fabrication of high-power, high-frequency transistors at UHF, L-, S-, and X-bands SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 W PEP level, S-band transistor packages have shown 300 W peak power for radar applications, and 6 W power output has been obtained at X-Band.
Development and Prospect of SiC Power Devices in Power Grid

SHENG Kuang,GUO Qing,ZHANG Junming,QIAN Zhaoming

DOI: https://doi.org/10.13334/j.0258-8013.pcsee.2012.30.001

2012-01-01

Abstract:Silicon Carbide(SiC) is a wide-bandgap semiconductor that has drawn significant research interests in recent years for its superior physical and electrical properties,such as larger bandgap,high breakdown electric field,high electron saturation velocity and high thermal conductivity.The paper introduces the developments of Silicon Carbide power devices in power grid,including the SiC PiN diodes,SiC-MOSFETs,SiC-IGBTs and SiC Thyristors.The perspectives of SiC power electronic devices in power grid are also proposed.The speedy growth of high power and high current SiC devices will have a strong impact on the development of power grid.
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Fan Li,Fabrizio Roccaforte,Giuseppe Greco,Patrick Fiorenza,Francesco La Via,Amador Pérez-Tomas,Jonathan Edward Evans,Craig Arthur Fisher,Finn Alec Monaghan,Philip Andrew Mawby,Mike Jennings

DOI: https://doi.org/10.3390/ma14195831

2021-10-05

Abstract:Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. At present the material remains firmly in the research domain due to numerous technological impediments that hamper its widespread adoption. The most obvious obstacle is defect-free 3C-SiC; presently, 3C-SiC bulk and heteroepitaxial (on-silicon) display high defect densities such as stacking faults and antiphase boundaries. Moreover, heteroepitaxy 3C-SiC-on-silicon means low temperature processing budgets are imposed upon the system (max. temperature limited to ~1400 °C) limiting selective doping realisation. This paper will give a brief overview of some of the scientific aspects associated with 3C-SiC processing technology in addition to focussing on the latest state of the art results. A particular focus will be placed upon key process steps such as Schottky and ohmic contacts, ion implantation and MOS processing including reliability. Finally, the paper will discuss some device prototypes (diodes and MOSFET) and draw conclusions around the prospects for 3C-SiC devices based upon the processing technology presented.
SIC power devices in power electronics: An overview

Luciano F. S. Alves,Ruan C. M. Gomes,Pierre Lefranc,Raoni De A. Pegado,Pierre-Olivier Jeannin,B. A. Luciano,Filipe V. Rocha,B.A. Luciano

DOI: https://doi.org/10.1109/cobep.2017.8257396

2017-11-01

Abstract:Silicon (Si) power devices have dominated the world of Power Electronics in the last years, and they have proven to be efficient in a wide range of applications. But high power, high frequency and high temperature applications require more than Si can deliver. With the advance of technology, Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices have evolved from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC and GaN devices have several compelling advantages: high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. This paper provides a general review on the properties of these materials comparing some performance between Si and SiC devices for typical power electronics applications. Based on studied information, line of progress and the current state of developing, SiC seems to be the most viable substitute in high power and high temperature applications in the mid-term of Si, due to the fact that the GaN is still used in a reduced number of applications.
Roadmap for SiC power devices

Mietek Bakowski

DOI: https://doi.org/10.26636/jtit.2000.3-4.30

2000-12-30

Journal of Telecommunications and Information Technology

Abstract:Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems. The challenges and prospects of SiC power device development are reviewed considering different device types. A close correlation between an exponential increase of current handling capability during recent five years and improvement in substrate quality is demonstrated. The voltage range of silicon and SiC unipolar and bipolar power devices with respect to the on-state voltage is determined based on device simulation. 4H-SiC unipolar devices are potentially superior to all silicon devices up to 10 kV. 4H-SiC unipolar devices are superior to all SiC bipolar devices up to 8-9 kV. The low end of SiC unipolar devices is determined to be around 200 V provided substrate resistance is reduced by thinning the substrate down to 100 um. The influence of reduced channel mobility on the specific on-state resistance of 4H-SiC DMOSFETs and UMOSFETs is shown. It has been demonstrated that 6H-SiC DMOSFETs could be a better choice compared to 4H-SiC MOSFETs in the voltage range below 600 V utilising better channel mobility obtainable so far on 6H-SiC polytype. An impact of super junction (SJ) concept on silicon and SiC MOSFET specific on-resistance limits is demonstrated
Development of High-Voltage SiC Power Electronic Devices

Ling Sang,Wenting Zhang,Yunlai An,Liang Wang,Yanfang Chen,Jialin Li,Yujie Du,Rui Liu,Xiping Niu,Xiaolei Yang,Shiyan Li,Gang Chen,Xinling Tang,Junmin Wu,Fei Yang

DOI: https://doi.org/10.1109/sslchinaifws54608.2021.9675164

2021-01-01

Abstract:Silicon carbide (SiC) is a widely used wide bandgap semiconductor which has the advantages of high voltage, high current capacity, low loss, fast heat dissipation and so on. In this paper, we review recent progress in the high-voltage SiC power electronic devices, including schottky barrier diode (SBD), PiN diode, junction barrier schottky diode (JBS), metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), and SiC power module. Moreover futher applications and perspectives of high voltage SiC devices is discussed.
Recent Progress in SiC and GaN Power Devices

Kuang Sheng,Shu Yang,Qing Guo,Hongyi Xu

DOI: https://doi.org/10.1149/08007.0037ecst

2017-01-01

Abstract:Wide bandgap SiC and GaN power devices are attractive for next-generation power electronic systems with increased efficiency and power density. In this paper, we review recent progress in SiC and GaN power devices, including the following. (1) Interface optimization techniques for SiC MOSFETs (e.g. NO/N2O annealing, P incorporation, metal interfacial-layer, high-k dielectric deposition, etc.) will be discussed. (2) Longterm reliability of SiC MOSFETs with special focus on time-dependent dielectric breakdown (TDDB) will be presented. (3) We will introduce our latest progress in the development of superjunction SiC devices, which can break the fundamental limit of the conventional unipolar devices. (4) In GaN-based lateral power devices, the 2DEG channel is an inherent normally-on channel. To achieve fail-safe operation and simpler gate drive circuit, normally-off device techniques will be introduced and compared.
Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Fei Wang,Zheyu Zhang

DOI: https://doi.org/10.24295/CPSSTPEA.2016.00003

2016-12-31

Abstract:This paper overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed

Materials Science,Engineering,Physics
Recent progress of SiC power devices and applications

Lijuan Li,Canbing Li,Yijia Cao,Feng Wang

DOI: https://doi.org/10.1002/tee.21888

IF: 0.923

2013-07-31

IEEJ Transactions on Electrical and Electronic Engineering

Abstract:Devices made of the wide‐bandgap semiconductor silicon carbide are capable of not only providing excellent performance for higher voltages, higher switching frequencies, higher junction temperatures, and higher power than silicon devices, but also leading to drastic reduction in system complexity, volume, and weight, as well as higher efficiency and better reliability of power electronics systems. The newly emerged technology has made rapid progress during the past decade, and we can expect even greater advantages and potential for energy savings and emission reduction in the coming years. In this paper, the research on SiC material and device technologies, the benefits, and some remaining issues are discussed. Recent progress (since 2007) in applications such as DC–DC, AC–DC, DC–AC, and AC–AC converters is discussed. Also, future applications and perspectives are analyzed. © 2013 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

engineering, electrical & electronic
Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Xibo Yuan,Ian Laird,Sam Walder

DOI: https://doi.org/10.1109/tpel.2020.3024862

IF: 5.967

2021-04-01

IEEE Transactions on Power Electronics

Abstract:Power devices based on wide-bandgap material such as silicon carbide (SiC) can operate at higher switching speeds, higher voltages, and higher temperatures compared to those based on silicon material. This article highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference, current overshoot, cross-talk effect, and have a negative impact on loads such as motors. This article presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side effects. This article provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

engineering, electrical & electronic
Review of Silicon Carbide Power Devices and Their Applications

X. She,A. Huang,B. Ozpineci,Óscar Lucía

DOI: https://doi.org/10.1109/TIE.2017.2652401

2017-01-16

Abstract:Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

Physics,Engineering,Computer Science,Materials Science
Oxide Reliability of SiC MOS Devices

Liangchun Yu,Kin P. Cheung,Jason Campbell,John S. Suehle,Kuang Sheng

DOI: https://doi.org/10.1109/irws.2008.4796106

2008-01-01

Abstract:Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore highly desirable. However, it has long been a common believe that the gate oxide breakdown reliability is a show-stopper, particularly at high temperature where SiC devices are expected to excel. In this paper, we report that the thermally grown gate oxide on 4H-SiC is intrinsically reliable even at temperature as high as 375degC. We further show that even with the current SiC processing technology, devices with 10 cm2 active area can still achieve 100-year lifetime @ E < 2.9 MV/cm and 375degC.

On Reliability of SiC Power Devices in Power Electronics

Comparative Study on Reliability and Application Features of SiC MOSFET

Soft-switching SiC Power Electronic Conversion for Distributed Energy Resources and Storage Applications

Reliability and performance limitations in SiC power devices

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Influence of SiC Power Electronic Devices on the Power System

SiC based Technology for High Power Electronics and Packaging Applications

Reliability and Standardization for SiC Power Devices

Advances in SiC materials and devices: an industrial point of view

Development and Prospect of SiC Power Devices in Power Grid

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

SIC power devices in power electronics: An overview

Roadmap for SiC power devices

Development of High-Voltage SiC Power Electronic Devices

Recent Progress in SiC and GaN Power Devices

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Recent progress of SiC power devices and applications

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Review of Silicon Carbide Power Devices and Their Applications

Oxide Reliability of SiC MOS Devices