Abstract:The four main passive circuit elements include the resistor, capacitor, inductor, and transformer. Inductors and transformers have been notoriously challenging to integrate in silicon, and they occupy a significant chip area. The limited metallization and conductive substrate result in a poor quality factor $(Q)$ and limited self-resonance frequency. The tuning of inductor-based resonators is further challenged by the limited tuning range and Q of switched-capacitors/inductors. Recent LPTV N-path structures have demonstrated new functionalities that address some of these challenges, such as equivalent second-order LC bandpass filtering, lowpass filtering, notch filtering, and non-magnetic nonreciprocity [1–5]. Transformers face additional challenges of limited coupling coefficients, especially when a large turns ratio is desired [6], but they are critical to impedance transformation and matching networks. This paper describes an impedance-transforming N-path filter offering passive voltage gain, which realizes transformer-based coupled-resonator functionality that (i) features the traditional N-path benefits of high Q, high linearity, and LO-defined tuning, (ii) enables ideal coupling $(k=1)$ regardless of the step-up ratio, (iii) can be cascaded with no transfer-function non-ideality to achieve even higher step-up voltage gain with high out-of-band (OOB) rejection, (iv) emulates transformer behavior over a wide range of frequencies despite being single-ended (SE), and (v) has ultra-low clock-power consumption. The concepts are validated through two $\sim 0.1 -$to-1GHz 65nm CMOS prototypes that achieve step-up ratios $(n)$ of 4 and 8 with k of 1, voltage gains of 15dB and 17dB at 500MHz with 27dB and 33dB OOB rejection, and buffer-de-embedded NFs of 3.4dB and 4.1dB at 500MHz, respectively. OP$_{1dB}$ is 2dBm, and the power consumption is 1.7 to 3.6mW over 0.1 to 1GHz for both prototypes.

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