Abstract:Semiconductor research has shifted towards exploring two-dimensional (2D) materials as candidates for next-generation electronic devices due to the limitations of existing silicon technology. Transition Metal Dichalcogenides (TMDCs) stand out for their exceptional optoelectronic properties and potential for advanced device integration. This thesis focuses on the synthesis of 2D TMDCs using Chemical Vapor Deposition (CVD) for their potential applications in transistors, memory, and neuromorphic computing. By optimizing the NaCl-assisted CVD method and examining their optical properties through Raman and photoluminescence spectroscopy, challenges such as premature growth, defects, and non-uniformity in MoS2 samples are addressed. The thesis highlights device fabrication techniques and electrical performance of salt-assisted CVD-grown MoS2 field-effect transistors, which exhibit hysteresis-free behavior and high field-effect mobility. A novel etching-free transfer technique is introduced, improving transistor performance and enabling applications in flexible optoelectronics. The thesis also explores monolayer MoS2 mem-transistors, demonstrating multifunctional room temperature transistor and high-temperature multi-level memory behaviour. These devices leverage interfacial physics and ion dynamics to achieve non-volatile memory with multi-level storage capabilities. Additionally, high density memory devices using monolayer WS2 are developed, which demonstrate 6-bit memory operation with neuromorphic biomimetic plasticity. The study also includes 2D TMDCs and their hetero-bilayers as potential 2D dilute magnetic semiconductors via doping, strain engineering using density functional theory and micromagnetic simulations, revealing potential applications in spintronics. This thesis makes significant contributions to advancing 2D materials for next-generation electronics and spintronic devices.

Spiral WSe 2 with Interlayer Twist for Memristive and Neuromorphic Device Applications

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

A synaptic memristor based on two-dimensional layered WSe 2 nanosheets with short- and long-term plasticity

Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS 2 Film

Development of large scale CVD grown two dimensional materials for field-effect transistors, thermally-driven neuromorphic memory, and spintronics applications

Planar memristor and artificial synaptic simulating based on two-dimensional layered tungsten oxychloride WO2Cl2

Direct Integration of Monolayer WS 2 with Lithographically Patterned Carbon Contacts for Memristor Application

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing

Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Spin‐Coating Deposited SnS2 Thin Film‐Based Memristor for Emulating Synapses

Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture

Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs As Electronic Synapses for Neuromorphic Computing

Two-dimensional layered materials for memristive and neuromorphic applications

Bipolar Resistive Switching in 2D MoSe2 Grown by Atmospheric Pressure Chemical Vapor Deposition

2D Layered Materials for Memristive and Neuromorphic Applications

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

The Role of Mobile Point Defects in Two-Dimensional Memristive Devices

Wedge-type engineered analog SiO$_\mathrm{x}$/Cu/SiO$_\mathrm{x}$-Memristive Devices for Neuromorphic Applications

Sliding Memristor in Parallel-Stacked Hexagonal Boron Nitride