Abstract:This paper presents the wafer‐scale synthesis of highly polycrystalline 2D molybdenum ditelluride (2H‐MoTe2), and its use as resistive switching layer in memristors. Most interestingly, the synthesized polycrystalline 2H‐MoTe2 film contains vertically aligned grain boundaries, providing confined diffusion paths for metal ions migration. This conductive filament confinement makes reliable resistive switching possible, applicable to artificial synaptic applications. 2D materials have attracted attention in the field of neuromorphic computing applications, demonstrating the potential for their use in low‐power synaptic devices at the atomic scale. However, synthetic 2D materials contain randomly distributed intrinsic defects and exhibit a stochasitc forming process, which results in variability of switching voltages, times, and stat resistances, as well as poor synaptic plasticity. Here, this work reports the wafer‐scale synthesis of highly polycrystalline semiconducting 2H‐phase molybdenum ditelluride (2H‐MoTe2) and its use for fabricating crossbar arrays of memristors. The 2H‐MoTe2 films contain small grains (≈30 nm) separated by vertically aligned grain boundaries (GBs). These aligned GBs provide confined diffusion paths for metal ions filtration (from the electrodes), resulting in reliable resistive switching (RS) due to conductive filament confinement. As a result, the polycrystalline 2H‐MoTe2 memristors shows improvement in the RS uniformity and stable multilevel resistance states, small cycle‐to‐cycle variation ( 83.7%), and long retention times (>104 s). Finally, 2H‐MoTe2 memristors show linear analog synaptic plasticity under more than 2500 repeatable pulses and a simulation‐based learning accuracy of 96.05% for image classification, which is the first analog synapse behavior reported for 2D MoTe2 based memristors.

Direct Integration of Monolayer WS 2 with Lithographically Patterned Carbon Contacts for Memristor Application

Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS 2 Film

Development and optimization of large-scale integration of 2D material in memristors

Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers

An Ultrathin Memristor Based on a Two-Dimensional WS2/MoS2 Heterojunction

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

Hybrid 2D/CMOS microchips for memristive applications

Spiral WSe 2 with Interlayer Twist for Memristive and Neuromorphic Device Applications

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Robust memristors based on layered two-dimensional materials

Bipolar Resistive Switching in 2D MoSe2 Grown by Atmospheric Pressure Chemical Vapor Deposition

Real-time numerical system convertor via two-dimensional WS2-based memristive device

Large-Scale and Robust Multifunctional Vertically-Aligned MoS$_2$ Photo-Memristors

Large Area CVD Mos2 Memristor Suitable for Neuromorphic Applications

Synthesis of Large-Area Ultrathin Graphdiyne Films at an Air–water Interface and Their Application in Memristors

Recent advancements in carbon-based materials for resistive switching applications

Fabricating Molybdenum Disulfide Memristors

Two-Dimensional Materials Based Memtransistors: Integration Strategies, Switching Mechanisms and Advanced Characterizations