Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

Distance-Dependent Evolution of Electronic States in Kagome-Honeycomb Lateral Heterostructures in FeSn

Distance-Dependent Evolution of Electronic States in Kagome- Honeycomb Lateral Heterostructures in FeSn

Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Flatbands and Emergent Ferromagnetic Ordering in Fe_{3}Sn_{2} Kagome Lattices.

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Simultaneous development of antiferromagnetism and local symmetry breaking in a kagome magnet (Co$_{0.45}$Fe$_{0.55}$)Sn

Lateral epitaxial growth of two-dimensional heterostructure linked by gold adatoms

Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures

Giant periodic pseudo-magnetic fields in strained kagome magnet FeSn epitaxial films on SrTiO$_3$(111) substrate

Reactivity of Ultrathin Kagome Metal FeSn toward Oxygen and Water

Visualizing symmetry-breaking electronic orders in epitaxial Kagome magnet FeSn films

Epitaxial Kagome Thin Films as a Platform for Topological Flat Bands

Effect of Fe doping on the electronic properties of CoSn Kagome semimetal

Self-Intercalated 1T-FeSe 2 as an Effective Kagome Lattice.

Reactivity of ultra-thin Kagome Metal FeSn towards Oxygen and Water

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Imaging real-space flat band localization in kagome magnet FeSn

Epitaxial Growth and Domain Structure Imaging of Kagome Magnet Fe$_3$Sn$_2$