Abstract:The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is crucial for its development and long-term operation in future devices. In this work, we realize large area, sub-10 nm epitaxial FeSn thin films, and explore the oxidation process via synchrotron-based photoelectron spectroscopy using in-situ oxygen and water dosing, as well as ex-situ air exposure. Upon exposure to atmosphere the FeSn films are shown to be highly reactive, with a stable ~3 nm thick oxide layer forming at the surface within 10 minutes. Notably the surface Fe remains largely unoxidized when compared to Sn, which undergoes near-complete oxidation. This is further confirmed with controlled in-situ dosing of O2 and H2O where only the Sn2 (stanene) inter-layers within the FeSn lattice oxidize, suggesting the Fe3Sn kagome layers remain almost pristine. These results are in excellent agreement with first principles calculations, which show Fe-O bonds to the Fe3Sn layer are energetically unfavorable, and furthermore, a large formation energy preference of 1.37 eV for Sn-O bonds in the stanene Sn2 layer over Sn-O bonds in the kagome Fe3Sn layer. The demonstration that oxidation only occurs within the stanene layers may provide new avenues in how to engineer, handle and prepare future kagome metal devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the reactivity of the ultrathin Kekulé metal FeSn in oxygen and water and its stability in the atmospheric environment. Specifically, the researchers focus on how to achieve the growth of large - area FeSn films less than 10 nanometers through molecular beam epitaxy (MBE) technology and explore the oxidation processes of these films in different oxygen - containing gas environments. In addition, the study also investigates the reactivity of FeSn films when exposed to the atmospheric environment, especially the formation rate and thickness of the surface oxide layer, and the influence of this oxidation on the internal structure of the films. It is found that FeSn films show high reactivity when exposed to the atmosphere and form a stable oxide layer about 3 nanometers thick within 10 minutes. Further experiments show that only the Sn2 (stanene) layer located on the surface is significantly oxidized, while the Fe3Sn Kekulé layer is hardly affected. This finding provides new ideas for the design, processing and preparation of future Kekulé metal devices, especially in terms of how to achieve the physical and electronic decoupling of the Kekulé layer by controlling the oxidation process.

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