Abstract:We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and InSb, and then we investigate the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice. The optical gaps deduced from the imaginary part of the dielectric function are associated with the characteristic interband transitions. We investigate the electronic and optical properties of the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice with three lattice constants of the bulk InAs, GaSb and AlSb, respectively. It is observed that the electronic and optical properties strongly depend on the lattice constant. Our results support the presence of two heavy-hole bands with increasing in-plane effective mass as we go far from the Fermi level. We notice a considerable decrease in the energy gaps and the effective masses of the heavy-holes in the k$_x$-k$_y$ plane compared to the bulk phases of the parent compounds. We demonstrate that the electrons are s-orbitals delocalized in the entire superlattice, while the holes have mainly 5p-Sb character localized in the In(As,Sb) side of the superlattice. In the superlattice, the low-frequency absorption spectra greatly increase when the electric field is polarized orthogonal to the growth axis allowing the applicability of III-V compounds for the long-wavelength infrared detectors.

One-Electron Spectrum of a Short-Period InAs/GaSb Superlattice with Interface Compensation of Strains

Electric fields and valence band offsets at strained [111] heterojunctions

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Interband Transitions of InAs/AlAs Short-Period Superlattices Grown by Molecular Beam Epitaxy

Interface Layers in In0.532ga0.468as/Inp Superlattices

Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

A coupled Raman-Brillouin study of direct and folded acoustic modes in long-period GaAsAlAs superlattices

Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

High resolution X-ray diffraction study in InAs/GaSb superlattice

Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate