A solution-processed, ultraviolet-irradiation-derived WO3 film as anode interface layer for high-performance non-fullerene organic solar cells

Tao Zhan,Peng Ren,Xiaofang Huang,Xiuyun Zhang,Guiting Chen,Jian Xiong,Xiaogang Xue,Ping Cai,Jian Zhang,Junwu Chen
DOI: https://doi.org/10.1016/j.solener.2021.01.037
IF: 7.188
2021-03-01
Solar Energy
Abstract:<p>Tungsten(VI) oxide (WO<sub>3</sub>) with excellent charge transport properties and intrinsic thermal and chemical robustness is a promising anode interface material instead of PEDOT:PSS in organic solar cells (OSCs). Herein, a solution-processed, ultraviolet-irradiation-derived WO<sub>3</sub> film as anode interface layer (AIL) is developed based on tungsten(VI) chloride (WCl<sub>6</sub>) as precursor. The WO<sub>3</sub> film is derived from the solution-processed precursor film with simple ultraviolet-irradiation treatment, and the preparation process without high-temperature annealing is very compatible with large-scale production and flexible substrate. The composition of the WO<sub>3</sub> film is analyzed by X-ray photoelectron spectroscopy. ITO modified by the WO<sub>3</sub> film, namely ITO/WO<sub>3</sub>, exhibits similarly high optical transmittance as that of bare ITO. The work function of ITO/WO<sub>3</sub> measured by ultraviolet photoelectron spectroscopy is obviously lower than that of bare ITO, which can facilitate effective holes extraction. In addition, the WO<sub>3</sub> film possesses relatively smooth and hydrophobic surface, beneficial to form excellent interface contact with active layer. Moreover, non-fullerene OSCs based on the WO<sub>3</sub> film as AIL are studied with typical and relatively low-cost PBDB-T:ITIC as active layer. The optimal efficiency (8.70%) of the device based on ITO/WO<sub>3</sub> is dramatically higher than that (3.32%) of the device based on bare ITO, and comparable to that (8.80%) of the device based on ITO/PEDOT:PSS. Therefore, the solution-processed, ultraviolet-irradiation-derived WO<sub>3</sub> film as AIL should have great potential to realize high-performance non-fullerene OSCs, which can also inspire a novel and promising route to prepare other transition metal oxide films in optoelectronic devices.</p>
energy & fuels
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