Abstract:In this study, an effective and simple approach for optimizing the performance of both cathode and anode interlayers in OSCs is demonstrated using 4-heptyl-4′-cyanobiphenyl (7CB) to dope a classic cathode (ZnO and SnO2) or an anode interlayer [poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)]. Because of the enhanced light absorption, improved physical contact between a photoactive layer and an interlayer, and increased carrier recombination, all of the devices based on a 7CB-doped interlayer show increased short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) compared to the corresponding undoped interlayer, regardless it is the anode interlayer or the cathode interlayer, which is a rare phenomenon in the interlayer modification field.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c06329?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c06329</a>.Experimental section (including the mobility calculation method, the images of various interface materials by polarizing optical microscopy, J–V curves and dark J–V curves of ZnO:7CB (x%) devices, ultraviolet photoelectron spectroscopy spectra of the work function of various ZnO:7CB (x%), etc) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c06329/suppl_file/am1c06329_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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