Abstract:As CuBi2O4 is an emerging p-type semiconductor for applications as a photocathode in photoelectrochemical (PEC) solar fuel production, there is much to be understood about the uniqueness and commonalities the material exhibits in comparison to other, more well-known metal oxide semiconductor systems. We examine p-CuBi2O4 thin films grown by reactive co-sputtering with a comprehensive spectroscopic and first principles characterization methodology to describe its fundamental electronic structure and optical properties while addressing intrinsic limitations in the observed PEC performance. The optical properties are evaluated from 180 to 2500 nm with a multi-modal approach using spectroscopic ellipsometry, UV–vis, and photothermal deflection spectroscopy to obtain the complex dielectric function and 5 orders of magnitude of the absorption coefficient. The films are evaluated under PEC conditions appropriate for CO2 reduction conditions (0.1 M HCO32–) with the inclusion of electron scavenger (S2O82–) to minimize catalytic limitations. While the theoretical maximum photocurrent density was 4.68 mA cm–2, the realized photocurrent was 1.18 mA cm–2 with front-side illumination and an onset potential of about 1.1 VRHE. The thickness dependence of the photocurrent under back-side illumination exposed a limited electron diffusion length of 45 nm attributed to electron small polaron transport. Connections are established between electronic structure, optical properties, and PEC performance through a combination of X-ray spectroscopies (X-ray absorption spectroscopy, X-ray emission spectroscopy, resonant inelastic X-ray scattering, and X-ray photoelectron spectroscopy) and ab initio modeling. These results not only provide the basis for understanding the observed polaron limitations but also form the basis of a broader connection to other material systems which are governed by polaronic limitations. This study provides a conceptual framework to interconnect observations made through the multiple types of advanced characterization methodologies presented. Ultimately, this work aims to assist the development of CuBi2O4 beyond its intrinsic limitations for its application in solar fuel production.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c03930?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c03930</a>.XPS core levels, VB, and secondary electron cutoff; SQUID magnetometry; transmission and angle-dependent reflection intensity with ellipsometry model fits; ellipsometry model parameters; reflection, transmission, and absorption spectrum; Tauc plot; XPS compared to NXES and multipeak fitting; ILDOS of region ii; DFT + U and HSE PDOS; HSE bands (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c03930/suppl_file/cm0c03930_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Revealing the Potential Crystal Structures of Earth-Abundant Nontoxic Photovoltaic CuBiI 4

Solution-Processed Air-Stable Copper Bismuth Iodide for Photovoltaics

Electronic Structure, Defect Properties, and Optimization of the Band Gap of the Earth-Abundant and Low-Toxicity Photovoltaic Absorber Cu3SbS4.

Synthesis and Characterization of Hydrazine Solution Processed Cu12Sb4S13 Film

Mixed Chalcogenide‐Halides for Stable, Lead‐Free and Defect‐Tolerant Photovoltaics: Computational Screening and Experimental Validation of CuBiSCl 2 with Ideal Band Gap

CuBi 2 O 4 : Electronic Structure, Optical Properties, and Photoelectrochemical Performance Limitations of the Photocathode

CuSbS2 As a Promising Earth-Abundant Photovoltaic Absorber Material: A Combined Theoretical and Experimental Study

Design and performance exploration of Pb-free low-cost all-inorganic perovskite-inspired CuAgBi2I8 solar cells: Theoretical approach

Limitations of Cs3Bi2I9 as Lead-Free Photovoltaic Absorber Materials.

Electronic structure, defect properties, and optimization of band gap of the earth-abundant and low-toxicity photovoltaic absorber Cu3SbS4

Crystal structure and electronic structure of quaternary semiconductors Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$ for solar cell absorber

Antimony Doping of CsBi 3 I 10 for Tailoring the Film Morphology and Defects toward Efficient Lead-Free Thin-Film Solar Cells

Photovoltaic properties of novel quaternary chalcogenides based on high-throughput screening and first-principles calculations

Progress and applications of (Cu–)Ag–Bi–I semiconductors, and their derivatives, as next-generation lead-free materials for photovoltaics, detectors and memristors

Bismuth Complex Controlled Morphology Evolution and CuSCN-Induced Transport Improvement Enable Efficient BiI3 Solar Cells

High-throughput screening of perovskite inspired bismuth halide materials: Toward lead-free photovoltaic cells and light-emitting diodes

Improvement and optimization of Cu2ZnSn(S1-xSex)4 structure for optoelectronic applications

Enhanced photoelectric performance in Cu–Bi double halide perovskite single crystals

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics

Solution Processable Direct Bandgap Copper‐Silver‐Bismuth Iodide Photovoltaics: Compositional Control of Dimensionality and Optoelectronic Properties

Efficient separation and low thermalization of hot carriers in natural superlattice of BiOCuCh (Ch = S, Se, Te)